Performance analysis of distributed HEMT model with geometry

M. E. Hoque*, M. Heimlich, A. E. Parker, Simon J. Mahon

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

The characteristics of each unit cell in a linearly scaled distributed HEMT model is analyzed. This provides insight into the internal behavior of any region of a whole device and hence guides optimization of device geometry and metallization according to need. The linear relationship between drain current and device widths are explained using the unit cell drain current. This is useful to predict the drain current characteristics for unmeasured device geometry. The effects of manifold on gain-bandwidth product of multi-finger devices for various widths are also presented by applying the linear model. This analysis explores the optimum width and number of fingers of a device to reduce the internal loss of a multi-fingered device.

Original languageEnglish
Title of host publication2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
Place of PublicationPiscataway, N.J
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781467301305
ISBN (Print)9781467301299
DOIs
Publication statusPublished - 2012
Event2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012 - Cocoa Beach, FL, United States
Duration: 15 Apr 201217 Apr 2012

Other

Other2012 IEEE 13th Annual Wireless and Microwave Technology Conference, WAMICON 2012
CountryUnited States
CityCocoa Beach, FL
Period15/04/1217/04/12

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