Performance trade-offs in using NVRAM write buffer for flash memory-based storage devices

Sooyong Kang*, Sungmin Park, Hoyoung Jung, Hyoki Shim, Jaehyuk Cha

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

123 Citations (Scopus)

Abstract

While NAND flash memory is used in a variety of end-user devices, it has a few disadvantages, such as asymmetric speed of read and write operations, inability to in-place updates, among others. To overcome these problems, various flash-aware strategies have been suggested in terms of buffer cache, file system, FTL, and others. Also, the recent development of next-generation nonvolatile memory types such as MRAM, FeRAM, and PRAM provide higher commercial value to Non-Volatile RAM (NVRAM). At today's prices, however, they are not yet cost-effective. In this paper, we suggest the utilization of small-sized, next-generation NVRAM as a write buffer to improve the overall performance of NAND flash memory-based storage systems. We propose various block-based NVRAM write buffer management policies and evaluate the performance improvement of NAND flash memory-based storage systems under each policy. Also, we propose a novel write buffer-aware flash translation layer algorithm, optimistic FTL, which is designed to harmonize well with NVRAM write buffers. Simulation results show that the proposed buffer management policies outperform the traditional page-based LRU algorithm and the proposed optimistic FTL outperforms previous log block-based FTL algorithms, such as BAST and FAST.

Original languageEnglish
Pages (from-to)744-758
Number of pages15
JournalIEEE Transactions on Computers
Volume58
Issue number6
DOIs
Publication statusPublished - 2009
Externally publishedYes

Keywords

  • Flash memory
  • Flash translation layer
  • Nonvolatile RAM
  • Solid-state disk
  • Storage device
  • Write buffer

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