Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures

M. Godlewski, E. M. Goldys, M. R. Phillips, V. Yu Ivanov, R. Langer, A. Barski

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

We studied high quality quasihomoepitaxial AlGaN/GaN quantum well (QW) heterostructures with high internal electric fields which lead to significant red shifts of exciton emission in wider QWs and an unusually long decay kinetics. The strong electric fields in the structures cause a significant change in the electron penetration range. The fields can be screened under intense electron beam excitation. We propose that electric field fluctuations are the reason for the observed in-plane variation of the CL intensity.

Original languageEnglish
Title of host publication2000 International Semiconducting and Insulating Materials Conference, SIMC 2000
Place of PublicationCanberra
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages31-34
Number of pages4
Volume2000-January
ISBN (Electronic)0780358147
DOIs
Publication statusPublished - 2000
Event11th International Semiconducting and Insulating Materials Conference, SIMC 2000 - Canberra, Australia
Duration: 3 Jul 20007 Jul 2000

Other

Other11th International Semiconducting and Insulating Materials Conference, SIMC 2000
CountryAustralia
CityCanberra
Period3/07/007/07/00

Keywords

  • Aluminum gallium nitride
  • Australia
  • Electron beams
  • Excitons
  • Fluctuations
  • Gallium nitride
  • Information analysis
  • Kinetic theory
  • Lead compounds
  • Piezoelectricity

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    Godlewski, M., Goldys, E. M., Phillips, M. R., Ivanov, V. Y., Langer, R., & Barski, A. (2000). Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures. In 2000 International Semiconducting and Insulating Materials Conference, SIMC 2000 (Vol. 2000-January, pp. 31-34). [939192] Canberra: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SIM.2000.939192