Photoconductive decay in LCVD/PECVD low temperature grown GaN

Bing Zhou, K. S. A. Butcher, Helen Zou, Xin Li, T. L. Tansley

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

-Photoconductive decay in undoped GaN has been investigated at room temperature using an ArF excimer laser as illuminative source and a boxcar integrator for detection of decay signals. GaN films were grown by combined laser and microwave plasma enhanced chemical vapour deposition at 550°C. The respective room temperature electron concentration and Hall mobility of the films were measured to be in the range 10 15-10 16 cm -3 and up to 200 cm 2/V s. Two time constants, 0.8 and 6 μs, are distinguishable in typical photoconductive decay curves and are associated with a dominant fast recombination and a weaker, slower process via an unidentified defect state respectively. Near-band photoluminescence dominates the emission spectrum with little contribution from the sub-bandgap process often found in the presence of high-density defects.

Original languageEnglish
Pages (from-to)279-281
Number of pages3
JournalSolid-State Electronics
Volume41
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - Feb 1997

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