Photoconductive decay in LCVD/PECVD low temperature grown GaN

Engineering

• Low-Temperature 100%
• Room Temperature 100%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Constant Time 50%
• Band Gap 50%
• Microwave Plasma 50%
• Emission Spectra 50%
• Excimer Laser 50%
• Electron Concentration 50%

Physics

• Photoconductivity 100%
• Room Temperature 66%
• Time Constant 33%
• Energy Gaps (Solid State) 33%
• Emission Spectra 33%
• Photoluminescence 33%
• Excimer Laser 33%
• Vapor Deposition 33%

Material Science

• Film 100%
• Plasma-Enhanced Chemical Vapor Deposition 50%
• Hall Mobility 50%
• Photoluminescence 50%
• Defect Density 50%