TY - JOUR
T1 - Photoconductivity during 30 ns laser pulses in "a-Si:H"
AU - Tzanetakis, P.
AU - Kopidakis, N.
AU - Fritzsche, H.
PY - 1996/5
Y1 - 1996/5
N2 - The photoconductivity, σp(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm2 and 2 μJ/cm2. For larger P the response time of σp is faster than 1 ns and σp = cP1/2 with the same c value for all samples studied, independent of defect concentration, ND. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than ND.
AB - The photoconductivity, σp(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm2 and 2 μJ/cm2. For larger P the response time of σp is faster than 1 ns and σp = cP1/2 with the same c value for all samples studied, independent of defect concentration, ND. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than ND.
UR - http://www.scopus.com/inward/record.url?scp=0030563450&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(95)00729-6
DO - 10.1016/0022-3093(95)00729-6
M3 - Article
AN - SCOPUS:0030563450
SN - 0022-3093
VL - 198-200
SP - 276
EP - 279
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 1
ER -