Photoconductivity during 30 ns laser pulses in "a-Si:H"

P. Tzanetakis*, N. Kopidakis, H. Fritzsche

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The photoconductivity, σp(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm2 and 2 μJ/cm2. For larger P the response time of σp is faster than 1 ns and σp = cP1/2 with the same c value for all samples studied, independent of defect concentration, ND. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than ND.

Original languageEnglish
Pages (from-to)276-279
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume198-200
Issue numberPART 1
DOIs
Publication statusPublished - May 1996
Externally publishedYes

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