Photoconductivity during 30 ns laser pulses in "a-Si:H"

P. Tzanetakis; N. Kopidakis; H. Fritzsche

doi:10.1016/0022-3093(95)00729-6

Photoconductivity during 30 ns laser pulses in "a-Si:H"

P. Tzanetakis^*, N. Kopidakis, H. Fritzsche

^*Corresponding author for this work

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

The photoconductivity, σ_p(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm₂ and 2 μJ/cm₂. For larger P the response time of σ_p is faster than 1 ns and σ_p = cP^1/2 with the same c value for all samples studied, independent of defect concentration, N_D. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than N_D.

Original language	English
Pages (from-to)	276-279
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(95)00729-6
Publication status	Published - May 1996
Externally published	Yes

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Tzanetakis, P., Kopidakis, N., & Fritzsche, H. (1996). Photoconductivity during 30 ns laser pulses in "a-Si:H". Journal of Non-Crystalline Solids, 198-200(PART 1), 276-279. https://doi.org/10.1016/0022-3093(95)00729-6

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