Photoconductivity during 30 ns laser pulses in "a-Si:H"

P. Tzanetakis; N. Kopidakis; H. Fritzsche

doi:10.1016/0022-3093(95)00729-6

Photoconductivity during 30 ns laser pulses in "a-Si:H"

P. Tzanetakis^*, N. Kopidakis, H. Fritzsche

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The photoconductivity, σ_p(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm₂ and 2 μJ/cm₂. For larger P the response time of σ_p is faster than 1 ns and σ_p = cP^1/2 with the same c value for all samples studied, independent of defect concentration, N_D. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than N_D.

Original language	English
Pages (from-to)	276-279
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(95)00729-6
Publication status	Published - May 1996
Externally published	Yes

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10.1016/0022-3093(95)00729-6

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title = "Photoconductivity during 30 ns laser pulses in {"}a-Si:H{"}",

abstract = "The photoconductivity, σp(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm2 and 2 μJ/cm2. For larger P the response time of σp is faster than 1 ns and σp = cP1/2 with the same c value for all samples studied, independent of defect concentration, ND. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than ND.",

author = "P. Tzanetakis and N. Kopidakis and H. Fritzsche",

year = "1996",

month = may,

doi = "10.1016/0022-3093(95)00729-6",

language = "English",

volume = "198-200",

pages = "276--279",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "PART 1",

}

TY - JOUR

T1 - Photoconductivity during 30 ns laser pulses in "a-Si:H"

AU - Tzanetakis, P.

AU - Kopidakis, N.

AU - Fritzsche, H.

PY - 1996/5

Y1 - 1996/5

N2 - The photoconductivity, σp(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm2 and 2 μJ/cm2. For larger P the response time of σp is faster than 1 ns and σp = cP1/2 with the same c value for all samples studied, independent of defect concentration, ND. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than ND.

AB - The photoconductivity, σp(t), of intrinsic and compensated hydrogenated amorphous silicon (a-Si:H) was measured at room temperature with nanosecond time resolution during 30 ns long laser pulses of 650 nm wavelength and pulse energies, P, between 35 mJ/cm2 and 2 μJ/cm2. For larger P the response time of σp is faster than 1 ns and σp = cP1/2 with the same c value for all samples studied, independent of defect concentration, ND. Deviations from this bimolecular recombination law begin when the total steady state photocarrier concentration becomes comparable to or less than ND.

UR - https://www.scopus.com/pages/publications/0030563450

U2 - 10.1016/0022-3093(95)00729-6

DO - 10.1016/0022-3093(95)00729-6

M3 - Article

AN - SCOPUS:0030563450

SN - 0022-3093

VL - 198-200

SP - 276

EP - 279

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Photoconductivity during 30 ns laser pulses in "a-Si:H"

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