The steady state photoconductivity σp of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027 cm-3s-1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σp(G) curves of doped and intrinsic a-Si:H merge at the highest G used.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1996|