Photoconductivity of a-Si H as a function of doping, temperature and photocarrier generation rates between 1013 and 1028cm-3s-1

P. Stradins; H. Fritzsche; Nikos Kopidakis; P. Tzanetakis

Photoconductivity of a-Si H as a function of doping, temperature and photocarrier generation rates between 10¹³ and 10²⁸cm^-3s^-1

P. Stradins^*, H. Fritzsche, Nikos Kopidakis, P. Tzanetakis

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Meeting abstract › peer-review

3 Citations (Scopus)

Abstract

The steady state photoconductivity σ_p of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×10²⁷ cm^-3s^-1. In the 20ppm B₂H₆/SiH₄ p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σ_p(G) curves of doped and intrinsic a-Si:H merge at the highest G used.

Original language	English
Pages (from-to)	765-770
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	420
Publication status	Published - 1996

Cite this

@article{aa0eb43429c646c6b8ad00396a8c2967,

title = "Photoconductivity of a-Si H as a function of doping, temperature and photocarrier generation rates between 1013 and 1028cm-3s-1",

abstract = "The steady state photoconductivity σp of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027 cm-3s-1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σp(G) curves of doped and intrinsic a-Si:H merge at the highest G used.",

author = "P. Stradins and H. Fritzsche and Nikos Kopidakis and P. Tzanetakis",

year = "1996",

language = "English",

volume = "420",

pages = "765--770",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Photoconductivity of a-Si H as a function of doping, temperature and photocarrier generation rates between 1013 and 1028cm-3s-1

AU - Stradins, P.

AU - Fritzsche, H.

AU - Kopidakis, Nikos

AU - Tzanetakis, P.

PY - 1996

Y1 - 1996

N2 - The steady state photoconductivity σp of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027 cm-3s-1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σp(G) curves of doped and intrinsic a-Si:H merge at the highest G used.

AB - The steady state photoconductivity σp of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027 cm-3s-1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σp(G) curves of doped and intrinsic a-Si:H merge at the highest G used.

UR - http://www.scopus.com/inward/record.url?scp=0030401080&partnerID=8YFLogxK

M3 - Meeting abstract

AN - SCOPUS:0030401080

SN - 0272-9172

VL - 420

SP - 765

EP - 770

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Photoconductivity of a-Si H as a function of doping, temperature and photocarrier generation rates between 10¹³ and 10²⁸cm^-3s^-1

Abstract

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