Photoconductivity of a-Si H as a function of doping, temperature and photocarrier generation rates between 1013 and 1028cm-3s-1

P. Stradins*, H. Fritzsche, Nikos Kopidakis, P. Tzanetakis

*Corresponding author for this work

Research output: Contribution to journalMeeting abstract

2 Citations (Scopus)

Abstract

The steady state photoconductivity σp of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027 cm-3s-1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The σp(G) curves of doped and intrinsic a-Si:H merge at the highest G used.

Original languageEnglish
Pages (from-to)765-770
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume420
Publication statusPublished - 1996

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