TY - JOUR
T1 - Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces
AU - Smith, Kevin E.
AU - Dhesi, Sarnjeet S.
AU - Stagarescu, Cristian B.
AU - Downes, James
AU - Doppalapudi, D.
AU - Moustakas, Theodore D.
PY - 1997
Y1 - 1997
N2 - The surface electronic structure of wurtzite GaN (0001) (1×1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.
AB - The surface electronic structure of wurtzite GaN (0001) (1×1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.
UR - http://www.scopus.com/inward/record.url?scp=0031365597&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031365597
SN - 0272-9172
VL - 482
SP - 787
EP - 792
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
ER -