Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces

Kevin E. Smith*, Sarnjeet S. Dhesi, Cristian B. Stagarescu, James Downes, D. Doppalapudi, Theodore D. Moustakas

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The surface electronic structure of wurtzite GaN (0001) (1×1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.

Original languageEnglish
Pages (from-to)787-792
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
Publication statusPublished - 1997
Externally publishedYes

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