Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces

Kevin E. Smith; Sarnjeet S. Dhesi; Cristian B. Stagarescu; James Downes; D. Doppalapudi; Theodore D. Moustakas

Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces

Kevin E. Smith^*, Sarnjeet S. Dhesi, Cristian B. Stagarescu, James Downes, D. Doppalapudi, Theodore D. Moustakas

^*Corresponding author for this work

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

The surface electronic structure of wurtzite GaN (0001) (1×1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N₂ ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H₂ and O₂, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of sp_z character, consistent with a dangling bond state.

Original language	English
Pages (from-to)	787-792
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
Publication status	Published - 1997
Externally published	Yes

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title = "Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces",

abstract = "The surface electronic structure of wurtzite GaN (0001) (1×1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.",

author = "Smith, {Kevin E.} and Dhesi, {Sarnjeet S.} and Stagarescu, {Cristian B.} and James Downes and D. Doppalapudi and Moustakas, {Theodore D.}",

year = "1997",

language = "English",

volume = "482",

pages = "787--792",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Photoemission study of the electronic structure of wurtzite GaN(0001) surfaces

AU - Smith, Kevin E.

AU - Dhesi, Sarnjeet S.

AU - Stagarescu, Cristian B.

AU - Downes, James

AU - Doppalapudi, D.

AU - Moustakas, Theodore D.

PY - 1997

Y1 - 1997

N2 - The surface electronic structure of wurtzite GaN (0001) (1×1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.

AB - The surface electronic structure of wurtzite GaN (0001) (1×1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.

UR - http://www.scopus.com/inward/record.url?scp=0031365597&partnerID=8YFLogxK

M3 - Article

VL - 482

SP - 787

EP - 792

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -