Abstract
Photoinduced microwave reflectometry (PIMR) has been used to evaluate S.I. InP wafers grown by various techniques. Fe-doped LEC S.I. wafers, a similar wafer with an unintentionally doped epitaxial layer, and vertical dynamic gradient freeze (VDGF) wafers were measured with an order of magnitude difference in pulse photoresponse at 904 nm. Similar measurements at 850 nm resulted in scaled photoresponse amplitudes, except for the LEC S.I. wafers, which had a negligible photoresponse. The authors propose that dislocation density and surface conditions dominate the effective recombination rate, and that the two-level model applicable for S.I. GaAs may not be appropriate for InP.
Original language | English |
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Title of host publication | Proceedings of the 6th Conference on Semi-Insulating III-V Materials |
Editors | Arthur George Milnes, Carla J. Miner |
Place of Publication | Bristol, UK |
Publisher | Adam Hilger |
Pages | 323-328 |
Number of pages | 6 |
ISBN (Print) | 0750300663 |
Publication status | Published - 1990 |
Externally published | Yes |
Event | Proceedings of the 6th Conference on Semi-Insulating III-V Materials - Toronto, Ont, Can Duration: 13 May 1990 → 16 May 1990 |
Other
Other | Proceedings of the 6th Conference on Semi-Insulating III-V Materials |
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City | Toronto, Ont, Can |
Period | 13/05/90 → 16/05/90 |