Photoinduced microwave reflectometry as a non-invasive technique for S.I. InP wafer characterization

Ronald J. Gutmann*, Michael C. Heimlich, Margaret Tait, Richard B. Bylsma, Eric M. Monberg

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

Photoinduced microwave reflectometry (PIMR) has been used to evaluate S.I. InP wafers grown by various techniques. Fe-doped LEC S.I. wafers, a similar wafer with an unintentionally doped epitaxial layer, and vertical dynamic gradient freeze (VDGF) wafers were measured with an order of magnitude difference in pulse photoresponse at 904 nm. Similar measurements at 850 nm resulted in scaled photoresponse amplitudes, except for the LEC S.I. wafers, which had a negligible photoresponse. The authors propose that dislocation density and surface conditions dominate the effective recombination rate, and that the two-level model applicable for S.I. GaAs may not be appropriate for InP.

Original languageEnglish
Title of host publicationProceedings of the 6th Conference on Semi-Insulating III-V Materials
EditorsArthur George Milnes, Carla J. Miner
Place of PublicationBristol, UK
PublisherAdam Hilger
Pages323-328
Number of pages6
ISBN (Print)0750300663
Publication statusPublished - 1990
Externally publishedYes
EventProceedings of the 6th Conference on Semi-Insulating III-V Materials - Toronto, Ont, Can
Duration: 13 May 199016 May 1990

Other

OtherProceedings of the 6th Conference on Semi-Insulating III-V Materials
CityToronto, Ont, Can
Period13/05/9016/05/90

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