Photoionisation and Inter (Conduction) Band Absorption in S and Te Doped Gallium Phosphide

E. Goldys

doi:10.1002/pssb.2221540141

Photoionisation and Inter (Conduction) Band Absorption in S and Te Doped Gallium Phosphide

E. Goldys^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The absorption coefficient of S and Te doped GaP i the region 0.25 to 1.4 eV is measured at 300 K. The experimental data are interpeted quantitatively. The spectrum is dominated by transitions from excited donor states. In the theoretical description the “mean” state concept is successfuly employed.

Original language	English
Pages (from-to)	397-404
Number of pages	8
Journal	Physica Status Solidi B: Basic Solid State Physics
Volume	154
Issue number	1
DOIs	https://doi.org/10.1002/pssb.2221540141
Publication status	Published - 1989
Externally published	Yes

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title = "Photoionisation and Inter (Conduction) Band Absorption in S and Te Doped Gallium Phosphide",

abstract = "The absorption coefficient of S and Te doped GaP i the region 0.25 to 1.4 eV is measured at 300 K. The experimental data are interpeted quantitatively. The spectrum is dominated by transitions from excited donor states. In the theoretical description the “mean” state concept is successfuly employed.",

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year = "1989",

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AB - The absorption coefficient of S and Te doped GaP i the region 0.25 to 1.4 eV is measured at 300 K. The experimental data are interpeted quantitatively. The spectrum is dominated by transitions from excited donor states. In the theoretical description the “mean” state concept is successfuly employed.

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M3 - Article

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IS - 1

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Photoionisation and Inter (Conduction) Band Absorption in S and Te Doped Gallium Phosphide

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