Photoionisation and Inter (Conduction) Band Absorption in S and Te Doped Gallium Phosphide

E. Goldys*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The absorption coefficient of S and Te doped GaP i the region 0.25 to 1.4 eV is measured at 300 K. The experimental data are interpeted quantitatively. The spectrum is dominated by transitions from excited donor states. In the theoretical description the “mean” state concept is successfuly employed.

Original languageEnglish
Pages (from-to)397-404
Number of pages8
Journalphysica status solidi (b)
Volume154
Issue number1
DOIs
Publication statusPublished - 1989
Externally publishedYes

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