Abstract
The photoluminescence of thin film CdS on glass grown by pulsed laser deposition is presented in the temperature range 4-300 K. The radiative recombination at the fundamental transition refers to band-to-band transitions leading to a peak centered at 2.48 eV at 300 K. A peak at such a high energy is not observed with single crystals and thin films formed by different techniques showing peaks at 2.42 and around 2.21 eV. In addition, optically pumped laser action at 2.48 eV at 300 K is demonstrated. The feedback is provided by self-formed microcavities within the hexagonal lattice of the samples.
| Original language | English |
|---|---|
| Pages (from-to) | 1162-1164 |
| Number of pages | 3 |
| Journal | Journal of Luminescence |
| Volume | 87-89 |
| DOIs | |
| Publication status | Published - May 2000 |
| Externally published | Yes |
Keywords
- thin CdS films
- photoluminescence
- laser devices
- laser deposition