Photoluminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition

B. Ullrich*, D. M. Bagnall, H. Sakai, Y. Segawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


The photoluminescence of thin film CdS on glass grown by pulsed laser deposition is presented in the temperature range 4-300 K. The radiative recombination at the fundamental transition refers to band-to-band transitions leading to a peak centered at 2.48 eV at 300 K. A peak at such a high energy is not observed with single crystals and thin films formed by different techniques showing peaks at 2.42 and around 2.21 eV. In addition, optically pumped laser action at 2.48 eV at 300 K is demonstrated. The feedback is provided by self-formed microcavities within the hexagonal lattice of the samples.

Original languageEnglish
Pages (from-to)1162-1164
Number of pages3
JournalJournal of Luminescence
Publication statusPublished - May 2000
Externally publishedYes


  • thin CdS films
  • photoluminescence
  • laser devices
  • laser deposition


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