Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure

E. M. Goldys*, V. W. L. Chin, T. L. Tansley, M. R. Vaughan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The paper discusses how light that should otherwise be absorbed is transported through the multiple quantum well (MQW) at a changed wavelength which causes the photoexcited carrier concentration to increase in the substrate and excites substrate photoluminescence. The results of room-temperature optical studies of unbiased GaAs/GaAlAs MQWs on GaAs buffer, from which the presence of the significant nonequilibrium concentration of photoexcited holes in the substrate can be inferred are presented. By obtaining the photon recycling mechanism, the increased concentration can be explained. Described by a quantitative model developed in this study is the influence of photon recycling on the optical-properties-photoluminescence-excitation spectrum of this structure with minority-carrier diffusion length as the only parameter.

Original languageEnglish
Pages (from-to)4194-4200
Number of pages7
JournalJournal of Applied Physics
Volume75
Issue number8
DOIs
Publication statusPublished - 15 Apr 1994

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