Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure

E. M. Goldys; V. W. L. Chin; T. L. Tansley; M. R. Vaughan

doi:10.1063/1.356004

Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure

E. M. Goldys^*, V. W. L. Chin, T. L. Tansley, M. R. Vaughan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The paper discusses how light that should otherwise be absorbed is transported through the multiple quantum well (MQW) at a changed wavelength which causes the photoexcited carrier concentration to increase in the substrate and excites substrate photoluminescence. The results of room-temperature optical studies of unbiased GaAs/GaAlAs MQWs on GaAs buffer, from which the presence of the significant nonequilibrium concentration of photoexcited holes in the substrate can be inferred are presented. By obtaining the photon recycling mechanism, the increased concentration can be explained. Described by a quantitative model developed in this study is the influence of photon recycling on the optical-properties-photoluminescence-excitation spectrum of this structure with minority-carrier diffusion length as the only parameter.

Original language	English
Pages (from-to)	4194-4200
Number of pages	7
Journal	Journal of Applied Physics
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.356004
Publication status	Published - 15 Apr 1994

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title = "Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure",

abstract = "The paper discusses how light that should otherwise be absorbed is transported through the multiple quantum well (MQW) at a changed wavelength which causes the photoexcited carrier concentration to increase in the substrate and excites substrate photoluminescence. The results of room-temperature optical studies of unbiased GaAs/GaAlAs MQWs on GaAs buffer, from which the presence of the significant nonequilibrium concentration of photoexcited holes in the substrate can be inferred are presented. By obtaining the photon recycling mechanism, the increased concentration can be explained. Described by a quantitative model developed in this study is the influence of photon recycling on the optical-properties-photoluminescence-excitation spectrum of this structure with minority-carrier diffusion length as the only parameter.",

author = "Goldys, {E. M.} and Chin, {V. W. L.} and Tansley, {T. L.} and Vaughan, {M. R.}",

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AU - Goldys, E. M.

AU - Chin, V. W. L.

AU - Tansley, T. L.

AU - Vaughan, M. R.

PY - 1994/4/15

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N2 - The paper discusses how light that should otherwise be absorbed is transported through the multiple quantum well (MQW) at a changed wavelength which causes the photoexcited carrier concentration to increase in the substrate and excites substrate photoluminescence. The results of room-temperature optical studies of unbiased GaAs/GaAlAs MQWs on GaAs buffer, from which the presence of the significant nonequilibrium concentration of photoexcited holes in the substrate can be inferred are presented. By obtaining the photon recycling mechanism, the increased concentration can be explained. Described by a quantitative model developed in this study is the influence of photon recycling on the optical-properties-photoluminescence-excitation spectrum of this structure with minority-carrier diffusion length as the only parameter.

AB - The paper discusses how light that should otherwise be absorbed is transported through the multiple quantum well (MQW) at a changed wavelength which causes the photoexcited carrier concentration to increase in the substrate and excites substrate photoluminescence. The results of room-temperature optical studies of unbiased GaAs/GaAlAs MQWs on GaAs buffer, from which the presence of the significant nonequilibrium concentration of photoexcited holes in the substrate can be inferred are presented. By obtaining the photon recycling mechanism, the increased concentration can be explained. Described by a quantitative model developed in this study is the influence of photon recycling on the optical-properties-photoluminescence-excitation spectrum of this structure with minority-carrier diffusion length as the only parameter.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure

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