Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure

E. M. Goldys*, V. W. L. Chin, T. L. Tansley, M. R. Vaughan

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The paper discusses how light that should otherwise be absorbed is transported through the multiple quantum well (MQW) at a changed wavelength which causes the photoexcited carrier concentration to increase in the substrate and excites substrate photoluminescence. The results of room-temperature optical studies of unbiased GaAs/GaAlAs MQWs on GaAs buffer, from which the presence of the significant nonequilibrium concentration of photoexcited holes in the substrate can be inferred are presented. By obtaining the photon recycling mechanism, the increased concentration can be explained. Described by a quantitative model developed in this study is the influence of photon recycling on the optical-properties-photoluminescence-excitation spectrum of this structure with minority-carrier diffusion length as the only parameter.

    Original languageEnglish
    Pages (from-to)4194-4200
    Number of pages7
    JournalJournal of Applied Physics
    Volume75
    Issue number8
    DOIs
    Publication statusPublished - 15 Apr 1994

    Fingerprint

    Dive into the research topics of 'Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure'. Together they form a unique fingerprint.

    Cite this