Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition

null Motlan; E. M. Goldys; L. V. Dao

doi:10.1116/1.1445167

Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition

Motlan, E. M. Goldys^*, L. V. Dao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The results of photoluminescence (PL) of GaSb self-assembled quantum dots (QD) grown by metalorganic chemical vapor deposition on GaAs substrates were reported. The PL emission from quantum dots was found at 1.08 eV and from the wetting layer (WL) at 1.40 eV. The emission from quantum dots was found thermally more stable than the wetting layer emission. The exciton binding energy in QDs was found to be 2 meV.

Original language	English
Pages (from-to)	291-294
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	1
DOIs	https://doi.org/10.1116/1.1445167
Publication status	Published - Jan 2002

Access to Document

10.1116/1.1445167

Cite this

@article{4ccad42b1e514de997e8fca59622f9d7,

title = "Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition",

abstract = "The results of photoluminescence (PL) of GaSb self-assembled quantum dots (QD) grown by metalorganic chemical vapor deposition on GaAs substrates were reported. The PL emission from quantum dots was found at 1.08 eV and from the wetting layer (WL) at 1.40 eV. The emission from quantum dots was found thermally more stable than the wetting layer emission. The exciton binding energy in QDs was found to be 2 meV.",

author = "Motlan and Goldys, {E. M.} and Dao, {L. V.}",

year = "2002",

month = jan,

doi = "10.1116/1.1445167",

language = "English",

volume = "20",

pages = "291--294",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AIP Publishing LLC",

number = "1",

}

TY - JOUR

T1 - Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition

AU - Motlan, null

AU - Goldys, E. M.

AU - Dao, L. V.

PY - 2002/1

Y1 - 2002/1

N2 - The results of photoluminescence (PL) of GaSb self-assembled quantum dots (QD) grown by metalorganic chemical vapor deposition on GaAs substrates were reported. The PL emission from quantum dots was found at 1.08 eV and from the wetting layer (WL) at 1.40 eV. The emission from quantum dots was found thermally more stable than the wetting layer emission. The exciton binding energy in QDs was found to be 2 meV.

AB - The results of photoluminescence (PL) of GaSb self-assembled quantum dots (QD) grown by metalorganic chemical vapor deposition on GaAs substrates were reported. The PL emission from quantum dots was found at 1.08 eV and from the wetting layer (WL) at 1.40 eV. The emission from quantum dots was found thermally more stable than the wetting layer emission. The exciton binding energy in QDs was found to be 2 meV.

UR - http://www.scopus.com/inward/record.url?scp=0036118831&partnerID=8YFLogxK

U2 - 10.1116/1.1445167

DO - 10.1116/1.1445167

M3 - Article

AN - SCOPUS:0036118831

SN - 1071-1023

VL - 20

SP - 291

EP - 294

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this