The results of photoluminescence (PL) of GaSb self-assembled quantum dots (QD) grown by metalorganic chemical vapor deposition on GaAs substrates were reported. The PL emission from quantum dots was found at 1.08 eV and from the wetting layer (WL) at 1.40 eV. The emission from quantum dots was found thermally more stable than the wetting layer emission. The exciton binding energy in QDs was found to be 2 meV.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Jan 2002|