Photoluminescence of GaSb self-assembled quantum dot layers grown by metalorganic chemical vapor deposition

Motlan, E. M. Goldys*, L. V. Dao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The results of photoluminescence (PL) of GaSb self-assembled quantum dots (QD) grown by metalorganic chemical vapor deposition on GaAs substrates were reported. The PL emission from quantum dots was found at 1.08 eV and from the wetting layer (WL) at 1.40 eV. The emission from quantum dots was found thermally more stable than the wetting layer emission. The exciton binding energy in QDs was found to be 2 meV.

Original languageEnglish
Pages (from-to)291-294
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number1
DOIs
Publication statusPublished - Jan 2002

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