Photoluminescence properties of thin CdS films on glass formed by laser ablation

B. Ullrich*, D. M. Bagnall, H. Sakai, Y. Segawa

*Corresponding author for this work

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

Photoluminescence at the fundamental transition of thin (1.5 μm) CdS films formed by laser ablation on glass is investigated in the range 4-300 K. In contrast to previous studies on thin CdS films and crystals, the emission takes the form of a single peak over the whole temperature range centered at 487 and 500 nm at 4 and 300 K, respectively. By the application of the van Roosbroeck-Shockley relation and Urbach's rule, a direct relationship is shown between emission and absorption. It is further demonstrated that the LO phonon is found to form the Urbach tail and determines the temperature induced gap shift.

Original languageEnglish
Pages (from-to)757-760
Number of pages4
JournalSolid State Communications
Volume109
Issue number12
DOIs
Publication statusPublished - 9 Mar 1999
Externally publishedYes

Keywords

  • thin films
  • semicinductors
  • laser processing
  • luminescence

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