Abstract
Photoluminescence at the fundamental transition of thin (1.5 μm) CdS films formed by laser ablation on glass is investigated in the range 4-300 K. In contrast to previous studies on thin CdS films and crystals, the emission takes the form of a single peak over the whole temperature range centered at 487 and 500 nm at 4 and 300 K, respectively. By the application of the van Roosbroeck-Shockley relation and Urbach's rule, a direct relationship is shown between emission and absorption. It is further demonstrated that the LO phonon is found to form the Urbach tail and determines the temperature induced gap shift.
| Original language | English |
|---|---|
| Pages (from-to) | 757-760 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 109 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 9 Mar 1999 |
| Externally published | Yes |
Keywords
- thin films
- semicinductors
- laser processing
- luminescence