Photoluminescence study of optically trapped InP semiconductor nanowires

Fan Wang*, Wen Jun Toe, Suriati Paiman, Qiang Gao, H. Hoe Tan, C. Jagadish, Peter J. Reece

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

Original languageEnglish
Title of host publication2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages211-212
Number of pages2
ISBN (Print)9781424473328
DOIs
Publication statusPublished - 2010
Event2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia
Duration: 12 Dec 201015 Dec 2010

Other

Other2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
CountryAustralia
CityCanberra, ACT
Period12/12/1015/12/10

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