Photoluminescence study of optically trapped InP semiconductor nanowires

Fan Wang; Wen Jun Toe; Suriati Paiman; Qiang Gao; H. Hoe Tan; C. Jagadish; Peter J. Reece

doi:10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires

Fan Wang^*, Wen Jun Toe, Suriati Paiman, Qiang Gao, H. Hoe Tan, C. Jagadish, Peter J. Reece

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	211-212
Number of pages	2
ISBN (Print)	9781424473328
DOIs	https://doi.org/10.1109/COMMAD.2010.5699744
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Other

Other	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699744

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Wang, F., Toe, W. J., Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., & Reece, P. J. (2010). Photoluminescence study of optically trapped InP semiconductor nanowires. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 211-212). Article 5699744 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2010.5699744

@inproceedings{ea9162fff3e04a9b823c7c8eb8aeb6a5,

title = "Photoluminescence study of optically trapped InP semiconductor nanowires",

abstract = "We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.",

author = "Fan Wang and Toe, {Wen Jun} and Suriati Paiman and Qiang Gao and Tan, {H. Hoe} and C. Jagadish and Reece, {Peter J.}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699744",

language = "English",

isbn = "9781424473328",

pages = "211--212",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Wang, F, Toe, WJ, Paiman, S, Gao, Q, Tan, HH, Jagadish, C & Reece, PJ 2010, Photoluminescence study of optically trapped InP semiconductor nanowires. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699744, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 211-212, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires. / Wang, Fan; Toe, Wen Jun; Paiman, Suriati et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 211-212 5699744.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Photoluminescence study of optically trapped InP semiconductor nanowires

AU - Wang, Fan

AU - Toe, Wen Jun

AU - Paiman, Suriati

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, C.

AU - Reece, Peter J.

PY - 2010

Y1 - 2010

N2 - We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

AB - We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

UR - http://www.scopus.com/inward/record.url?scp=79951761217&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2010.5699744

DO - 10.1109/COMMAD.2010.5699744

M3 - Conference proceeding contribution

AN - SCOPUS:79951761217

SN - 9781424473328

SP - 211

EP - 212

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Wang F, Toe WJ, Paiman S, Gao Q, Tan HH, Jagadish C et al. Photoluminescence study of optically trapped InP semiconductor nanowires. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 211-212. 5699744 doi: 10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires

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