Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications

Ahtisham Ul Haq Pampori; Sheikh Aamir Ahsan; Sudip Ghosh; Sourabh Khandelwal; Yogesh Singh Chauhan

doi:10.1109/EDTM.2018.8421498

Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications

Ahtisham Ul Haq Pampori, Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal, Yogesh Singh Chauhan

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

In this paper, we present a physics based compact model for GaN-based Metal-Semiconductor-Metal (MSM) 2DEG varactors in which the intrinsic charges and currents are evaluated in terms of the bias-dependent surface-potential. Physical phenomena such as Thermionic Emission, Poole-Frenkel Effect and Fowler-Nordheim Tunneling are incorporated to realize the non-idealities of the Schottky gates. The model is successfully validated against measured data for a state-of-the-art GaN-based varactor. Furthermore, a circuit simulation is performed for a phase shifting network wherein its behavior for various bias conditions and operating frequencies is observed using the proposed model.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Subtitle of host publication	proceedings of technical papers
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	349-351
Number of pages	3
ISBN (Electronic)	9781538637128, 9781538637111
ISBN (Print)	9781538637135
DOIs	https://doi.org/10.1109/EDTM.2018.8421498
Publication status	Published - 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 13 Mar 2018 → 16 Mar 2018

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	13/03/18 → 16/03/18

Keywords

MSM-2DEG
Varactor
Compact Model

Access to Document

10.1109/EDTM.2018.8421498

Cite this

Ul Haq Pampori, A., Ahsan, S. A., Ghosh, S., Khandelwal, S., & Chauhan, Y. S. (2018). Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications. In 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) : proceedings of technical papers (pp. 349-351). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EDTM.2018.8421498

@inproceedings{8863c5f2ad944eaaa1831310428ce36d,

title = "Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications",

abstract = "In this paper, we present a physics based compact model for GaN-based Metal-Semiconductor-Metal (MSM) 2DEG varactors in which the intrinsic charges and currents are evaluated in terms of the bias-dependent surface-potential. Physical phenomena such as Thermionic Emission, Poole-Frenkel Effect and Fowler-Nordheim Tunneling are incorporated to realize the non-idealities of the Schottky gates. The model is successfully validated against measured data for a state-of-the-art GaN-based varactor. Furthermore, a circuit simulation is performed for a phase shifting network wherein its behavior for various bias conditions and operating frequencies is observed using the proposed model.",

keywords = "MSM-2DEG, Varactor, Compact Model",

author = "{Ul Haq Pampori}, Ahtisham and Ahsan, {Sheikh Aamir} and Sudip Ghosh and Sourabh Khandelwal and Chauhan, {Yogesh Singh}",

year = "2018",

doi = "10.1109/EDTM.2018.8421498",

language = "English",

isbn = "9781538637135",

pages = "349--351",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

}

Ul Haq Pampori, A, Ahsan, SA, Ghosh, S, Khandelwal, S & Chauhan, YS 2018, Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications. in 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) : proceedings of technical papers. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 349-351, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 13/03/18. https://doi.org/10.1109/EDTM.2018.8421498

Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications. / Ul Haq Pampori, Ahtisham; Ahsan, Sheikh Aamir; Ghosh, Sudip et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) : proceedings of technical papers. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 349-351.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications

AU - Ul Haq Pampori, Ahtisham

AU - Ahsan, Sheikh Aamir

AU - Ghosh, Sudip

AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

PY - 2018

Y1 - 2018

N2 - In this paper, we present a physics based compact model for GaN-based Metal-Semiconductor-Metal (MSM) 2DEG varactors in which the intrinsic charges and currents are evaluated in terms of the bias-dependent surface-potential. Physical phenomena such as Thermionic Emission, Poole-Frenkel Effect and Fowler-Nordheim Tunneling are incorporated to realize the non-idealities of the Schottky gates. The model is successfully validated against measured data for a state-of-the-art GaN-based varactor. Furthermore, a circuit simulation is performed for a phase shifting network wherein its behavior for various bias conditions and operating frequencies is observed using the proposed model.

AB - In this paper, we present a physics based compact model for GaN-based Metal-Semiconductor-Metal (MSM) 2DEG varactors in which the intrinsic charges and currents are evaluated in terms of the bias-dependent surface-potential. Physical phenomena such as Thermionic Emission, Poole-Frenkel Effect and Fowler-Nordheim Tunneling are incorporated to realize the non-idealities of the Schottky gates. The model is successfully validated against measured data for a state-of-the-art GaN-based varactor. Furthermore, a circuit simulation is performed for a phase shifting network wherein its behavior for various bias conditions and operating frequencies is observed using the proposed model.

KW - MSM-2DEG

KW - Varactor

KW - Compact Model

UR - http://www.scopus.com/inward/record.url?scp=85051492743&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421498

DO - 10.1109/EDTM.2018.8421498

M3 - Conference proceeding contribution

AN - SCOPUS:85051492743

SN - 9781538637135

SP - 349

EP - 351

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -

Ul Haq Pampori A, Ahsan SA, Ghosh S, Khandelwal S, Chauhan YS. Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications. In 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) : proceedings of technical papers. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 349-351 doi: 10.1109/EDTM.2018.8421498

Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this