Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications

Ahtisham Ul Haq Pampori, Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

In this paper, we present a physics based compact model for GaN-based Metal-Semiconductor-Metal (MSM) 2DEG varactors in which the intrinsic charges and currents are evaluated in terms of the bias-dependent surface-potential. Physical phenomena such as Thermionic Emission, Poole-Frenkel Effect and Fowler-Nordheim Tunneling are incorporated to realize the non-idealities of the Schottky gates. The model is successfully validated against measured data for a state-of-the-art GaN-based varactor. Furthermore, a circuit simulation is performed for a phase shifting network wherein its behavior for various bias conditions and operating frequencies is observed using the proposed model.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Subtitle of host publicationproceedings of technical papers
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages349-351
Number of pages3
ISBN (Electronic)9781538637128, 9781538637111
ISBN (Print)9781538637135
DOIs
Publication statusPublished - 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 13 Mar 201816 Mar 2018

Conference

Conference2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period13/03/1816/03/18

Keywords

  • MSM-2DEG
  • Varactor
  • Compact Model

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