Physics-based compact models: an emerging trend in simulation-based GaN HEMT power amplifier design

Sourabh Khandelwal*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)

Abstract

An important and impactful trend in GaN HEMT transistor model representation is the emergence of physics-based compact models. Developed from device physics, these models offer: high scalability, close connection to technology for deign-technology co-optimization, ability to model statistical manufacturing variations, and ability to model long-term device degradation effects. The novel features of these models will be compared with the traditional empirical modeling approaches. Results achieved so far with these models will be discussed. As the power amplifier design requirements become increasingly stringent, physics-based compact models can become enablers of next generation simulation-based power amplifier designs.

Original languageEnglish
Title of host publication2019 IEEE 20th Wireless and Microwave Technology Conference (WAMICON)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781538695975, 9781538695968
ISBN (Print)9781538695982
DOIs
Publication statusPublished - 2019
Externally publishedYes
Event20th IEEE Wireless and Microwave Technology Conference, WAMICON 2019 - Cocoa Beach, United States
Duration: 8 Apr 20199 Apr 2019

Conference

Conference20th IEEE Wireless and Microwave Technology Conference, WAMICON 2019
CountryUnited States
CityCocoa Beach
Period8/04/199/04/19

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