In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high electron mobility transistors is demonstrated that is constructed around a surface-potential-based core. Expressions for drain current and intrinsic terminal charges in the form of surface-potential are used to simultaneously model the DC characteristics and the intrinsic capacitances of a commercial GaN device. Self-heating and trapping effects are incorporated to account for the non-linear nature of the device. We discuss the parameter extraction flow for some of the key model parameters that are instrumental in fitting the DC characteristics, which simultaneously determines the bias-dependent intrinsic capacitances and conductances that significantly eases the RF parameter extraction. Parasitic capacitances, gate finger resistance, and extrinsic bus-inductances are extracted, from a single set of measured non-cold-FET S-parameters, using the model process design kit. The extraction procedure is validated through overlays of broadband (0.5–50 GHz) S-parameters, load-pull and harmonic-balance (10 GHz) simulations against measured data, under multiple bias conditions to successfully demonstrate the model performance at large-signal RF excitations.
|Number of pages||10|
|Journal||IEEE Journal of the Electron Devices Society|
|Publication status||Published - Sep 2017|
- GaN HEMT
- parameter extraction
- physics-based RF compact model