Piezoelectric coefficient of InN films prepared by radio-frequency sputtering

M. Wintrebert-Fouquet; K. S A Butcher; I. L. Guy; Z. Zheng

doi:10.1016/j.tsf.2007.08.009

Piezoelectric coefficient of InN films prepared by radio-frequency sputtering

M. Wintrebert-Fouquet^*, K. S A Butcher, I. L. Guy, Z. Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An interferometric method has been used to measure the piezoelectric coefficient d₃₃ in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low temperature growth technique has the advantage of being able to produce samples for piezoelectric measurements where the InN film is grown directly on an Au metal back contact, allowing the accurate measurement of the piezoelectric coefficient of the InN layer without any parasitic series resistance. The InN growth conditions are described, and both crystal and optical characterizations of the film are presented. The measured value of the coefficient was found to be 4.0 ± 0.1 pm V^{- 1}.

Original language	English
Pages (from-to)	7267-7270
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2007.08.009
Publication status	Published - 1 Sep 2008

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title = "Piezoelectric coefficient of InN films prepared by radio-frequency sputtering",

abstract = "An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low temperature growth technique has the advantage of being able to produce samples for piezoelectric measurements where the InN film is grown directly on an Au metal back contact, allowing the accurate measurement of the piezoelectric coefficient of the InN layer without any parasitic series resistance. The InN growth conditions are described, and both crystal and optical characterizations of the film are presented. The measured value of the coefficient was found to be 4.0 ± 0.1 pm V- 1.",

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AU - Wintrebert-Fouquet, M.

AU - Butcher, K. S A

AU - Guy, I. L.

AU - Zheng, Z.

PY - 2008/9/1

Y1 - 2008/9/1

N2 - An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low temperature growth technique has the advantage of being able to produce samples for piezoelectric measurements where the InN film is grown directly on an Au metal back contact, allowing the accurate measurement of the piezoelectric coefficient of the InN layer without any parasitic series resistance. The InN growth conditions are described, and both crystal and optical characterizations of the film are presented. The measured value of the coefficient was found to be 4.0 ± 0.1 pm V- 1.

AB - An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low temperature growth technique has the advantage of being able to produce samples for piezoelectric measurements where the InN film is grown directly on an Au metal back contact, allowing the accurate measurement of the piezoelectric coefficient of the InN layer without any parasitic series resistance. The InN growth conditions are described, and both crystal and optical characterizations of the film are presented. The measured value of the coefficient was found to be 4.0 ± 0.1 pm V- 1.

UR - http://www.scopus.com/inward/record.url?scp=49349105977&partnerID=8YFLogxK

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JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 21

ER -

Piezoelectric coefficient of InN films prepared by radio-frequency sputtering

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