Piezoelectricity in indium nitride

I. L. Guy, Z. Zheng, M. Wintrebert-Fouquet, K. S A Butcher*, P. Chen, T. L. Tansley

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)


    An interferometric method has been used to measure the piezoelectric coefficient d33 in thin, InN layers grown by remote plasma-enhanced chemical vapour deposition. The measured value of the coefficient varies from around 3.1 to 4.7pmV-1. Theoretical predictions for these coefficients are scarce, but these values are significantly lower than those which are available. The discrepancy arises largely from the clamping of the film by the substrate, but may also be due to defects within the material.

    Original languageEnglish
    Pages (from-to)72-76
    Number of pages5
    JournalJournal of Crystal Growth
    Issue number1
    Publication statusPublished - 15 Aug 2004


    • A1. Polarization
    • B1. Nitride
    • B2. Piezoelectric materials
    • B2. Semiconducting indium compounds


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