Piezoelectricity in indium nitride

I. L. Guy, Z. Zheng, M. Wintrebert-Fouquet, K. S A Butcher*, P. Chen, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

An interferometric method has been used to measure the piezoelectric coefficient d33 in thin, InN layers grown by remote plasma-enhanced chemical vapour deposition. The measured value of the coefficient varies from around 3.1 to 4.7pmV-1. Theoretical predictions for these coefficients are scarce, but these values are significantly lower than those which are available. The discrepancy arises largely from the clamping of the film by the substrate, but may also be due to defects within the material.

Original languageEnglish
Pages (from-to)72-76
Number of pages5
JournalJournal of Crystal Growth
Volume269
Issue number1
DOIs
Publication statusPublished - 15 Aug 2004

Keywords

  • A1. Polarization
  • B1. Nitride
  • B2. Piezoelectric materials
  • B2. Semiconducting indium compounds

Fingerprint

Dive into the research topics of 'Piezoelectricity in indium nitride'. Together they form a unique fingerprint.

Cite this