TY - JOUR
T1 - Piezoelectricity in indium nitride
AU - Guy, I. L.
AU - Zheng, Z.
AU - Wintrebert-Fouquet, M.
AU - Butcher, K. S A
AU - Chen, P.
AU - Tansley, T. L.
PY - 2004/8/15
Y1 - 2004/8/15
N2 - An interferometric method has been used to measure the piezoelectric coefficient d33 in thin, InN layers grown by remote plasma-enhanced chemical vapour deposition. The measured value of the coefficient varies from around 3.1 to 4.7pmV-1. Theoretical predictions for these coefficients are scarce, but these values are significantly lower than those which are available. The discrepancy arises largely from the clamping of the film by the substrate, but may also be due to defects within the material.
AB - An interferometric method has been used to measure the piezoelectric coefficient d33 in thin, InN layers grown by remote plasma-enhanced chemical vapour deposition. The measured value of the coefficient varies from around 3.1 to 4.7pmV-1. Theoretical predictions for these coefficients are scarce, but these values are significantly lower than those which are available. The discrepancy arises largely from the clamping of the film by the substrate, but may also be due to defects within the material.
KW - A1. Polarization
KW - B1. Nitride
KW - B2. Piezoelectric materials
KW - B2. Semiconducting indium compounds
UR - http://www.scopus.com/inward/record.url?scp=3342995198&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.05.035
DO - 10.1016/j.jcrysgro.2004.05.035
M3 - Article
AN - SCOPUS:3342995198
VL - 269
SP - 72
EP - 76
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -