Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors

Kaiyuan Yao; Sourabh Khandelwal; Firas Sammoura; Atsushi Kazama; Chenming Hu; Liwei Lin

doi:10.1109/LED.2015.2456178

Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors

Kaiyuan Yao, Sourabh Khandelwal, Firas Sammoura, Atsushi Kazama, Chenming Hu, Liwei Lin

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

Drain current of AlGaN/GaN high electron mobility transistors (HEMTs) is measured to decrease/increase with in-plane tensile/compressive external strain. Such a trend is opposite to the conventional theory of direct piezoelectric effect on 2-D electron gas (2DEG). The reason is found to be the dependence of nickel gate barrier height on external strain, which strongly affects HEMTs' threshold voltage and 2DEG concentration. The Ni/AlGaN interface states are proposed to be responsible for strain-induced gate barrier variations, which are important for device performances and sensor applications.

Original language	English
Article number	7156076
Pages (from-to)	902-904
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	9
DOIs	https://doi.org/10.1109/LED.2015.2456178
Publication status	Published - 1 Sept 2015
Externally published	Yes

Keywords

GaN HEMT
piezoelectricity
Schottky barrier

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10.1109/LED.2015.2456178

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abstract = "Drain current of AlGaN/GaN high electron mobility transistors (HEMTs) is measured to decrease/increase with in-plane tensile/compressive external strain. Such a trend is opposite to the conventional theory of direct piezoelectric effect on 2-D electron gas (2DEG). The reason is found to be the dependence of nickel gate barrier height on external strain, which strongly affects HEMTs' threshold voltage and 2DEG concentration. The Ni/AlGaN interface states are proposed to be responsible for strain-induced gate barrier variations, which are important for device performances and sensor applications.",

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AU - Yao, Kaiyuan

AU - Khandelwal, Sourabh

AU - Sammoura, Firas

AU - Kazama, Atsushi

AU - Hu, Chenming

AU - Lin, Liwei

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Drain current of AlGaN/GaN high electron mobility transistors (HEMTs) is measured to decrease/increase with in-plane tensile/compressive external strain. Such a trend is opposite to the conventional theory of direct piezoelectric effect on 2-D electron gas (2DEG). The reason is found to be the dependence of nickel gate barrier height on external strain, which strongly affects HEMTs' threshold voltage and 2DEG concentration. The Ni/AlGaN interface states are proposed to be responsible for strain-induced gate barrier variations, which are important for device performances and sensor applications.

AB - Drain current of AlGaN/GaN high electron mobility transistors (HEMTs) is measured to decrease/increase with in-plane tensile/compressive external strain. Such a trend is opposite to the conventional theory of direct piezoelectric effect on 2-D electron gas (2DEG). The reason is found to be the dependence of nickel gate barrier height on external strain, which strongly affects HEMTs' threshold voltage and 2DEG concentration. The Ni/AlGaN interface states are proposed to be responsible for strain-induced gate barrier variations, which are important for device performances and sensor applications.

KW - GaN HEMT

KW - piezoelectricity

KW - Schottky barrier

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Piezoelectricity-induced schottky barrier height variations in AlGaN/GaN high electron mobility transistors

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Keywords

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