Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: growth and characterization

Engineering

• Cleaning Procedure 50%
• Deep Level 50%
• Full width at half maximum 100%
• High energy electron diffraction 50%
• Interfacial Region 50%
• Low-Temperature 50%
• Microwave Plasma 50%
• Plasma Treatment 50%
• Related Mechanism 50%
• Room Temperature 100%
• Stimulated Emission 50%
• Substrate Surface 50%
• Thin Films 50%
• Two Dimensional 50%
• X Ray Diffraction 100%

Material Science

• Density 20%
• Epilayers 40%
• Molecular Beam Epitaxy 100%
• Nucleation 40%
• Photoluminescence 40%
• Reflection High-Energy Electron Diffraction 20%
• Sapphire 100%
• Single Crystal 20%
• Surface (Surface Science) 20%
• Thin Films 20%
• Transition Layer 20%
• X-Ray Diffraction 40%
• ZnO 100%