Polarization effects and fiber-laser-pumping of a 2-μm-pumped OP-GaAs OPO

C. Kieleck*, M. Eichhorn, D. Faye, E. Lallier, S. D. Jackson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

13 Citations (Scopus)

Abstract

Gallium arsenide combines a large nonlinear coefficient, a good thermal conductivity, excellent mechanical properties, and a wide transparency range (0.9-17μm). Improvement in hybrid vapour phase epitaxy growing techniques of quasiphase- matched orientation-patterned GaAs (OP-GaAs) allows larger sample thickness and permits efficient operation as a mid-infrared optical parametric oscillator at Watt-level average output powers. Especially its low absorption loss (~; 0.01 cm-1), its laser damage threshold comparable to ZGP (~ 2 J/cm2) are suitable properties for efficient non-critical phase matched OPOs. As there is no natural birefringence in GaAs, phase matching is independent of polarization and propagation direction, offering the ability to pump OP-GaAs with a variety of polarization states. Thus, even unpolarized or poorly polarized sources like simple fiber lasers have been efficiently used as pump sources. The paper will discuss recent results obtained with an OP-GaAs OPO directly pumped by a 2.09 μm Q-switched Tm,Ho:silica fiber laser and a study on polarization effects using a Q-switched 2.09 μm Ho:YAG laser as the pump. With a 2.09 μm Q-switched Tm,Ho:silica fiber laser pump source, up to 2.2 W of average output power was achieved at 40 kHz repetition rate, 1.9 W at 60 kHz and 1.3 W at 75 kHz in the mid-infrared range.

Original languageEnglish
Title of host publicationNonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX
EditorsP. E. Powers
Place of PublicationWashington, DC
PublisherSPIE
Pages1-13
Number of pages13
Volume7582
ISBN (Print)9780819479785
DOIs
Publication statusPublished - 2010
Externally publishedYes
EventNonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX - San Francisco, CA, United States
Duration: 25 Jan 201028 Jan 2010

Other

OtherNonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX
Country/TerritoryUnited States
CitySan Francisco, CA
Period25/01/1028/01/10

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