Post-sputtering heat treatments of molybdenum on silicon wafer

Xuguang Jia; Ziyun Lin; Terry Chien-Jen Yang; Binesh Puthen-Veettil; Lingfeng Wu; Gavin Conibeer; Ivan Perez-Wurfl

doi:10.3390/app8091692

Post-sputtering heat treatments of molybdenum on silicon wafer

Xuguang Jia^*, Ziyun Lin, Terry Chien-Jen Yang, Binesh Puthen-Veettil, Lingfeng Wu, Gavin Conibeer, Ivan Perez-Wurfl

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

53 Downloads (Pure)

Abstract

This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.

Original language	English
Article number	1692
Pages (from-to)	1-10
Number of pages	10
Journal	Applied Sciences
Volume	8
Issue number	9
DOIs	https://doi.org/10.3390/app8091692
Publication status	Published - 18 Sept 2018

Bibliographical note

Copyright the Author(s) 2018. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

Si quantum dots
solar cells
molybdenum
high temperature annealing

Access to Document

10.3390/app8091692Licence: CC BY

Publisher version (open access)Final published version, 3.75 MBLicence: CC BY

Cite this

@article{66ad003806cc4815b6ecb352cd171783,

title = "Post-sputtering heat treatments of molybdenum on silicon wafer",

abstract = "This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.",

keywords = "Si quantum dots, solar cells, molybdenum, high temperature annealing",

author = "Xuguang Jia and Ziyun Lin and Yang, {Terry Chien-Jen} and Binesh Puthen-Veettil and Lingfeng Wu and Gavin Conibeer and Ivan Perez-Wurfl",

note = "Copyright the Author(s) 2018. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.",

year = "2018",

month = sep,

day = "18",

doi = "10.3390/app8091692",

language = "English",

volume = "8",

pages = "1--10",

journal = "Applied Sciences",

issn = "2076-3417",

publisher = "MDPI",

number = "9",

}

TY - JOUR

T1 - Post-sputtering heat treatments of molybdenum on silicon wafer

AU - Jia, Xuguang

AU - Lin, Ziyun

AU - Yang, Terry Chien-Jen

AU - Puthen-Veettil, Binesh

AU - Wu, Lingfeng

AU - Conibeer, Gavin

AU - Perez-Wurfl, Ivan

N1 - Copyright the Author(s) 2018. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2018/9/18

Y1 - 2018/9/18

N2 - This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.

AB - This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.

KW - Si quantum dots

KW - solar cells

KW - molybdenum

KW - high temperature annealing

UR - http://www.scopus.com/inward/record.url?scp=85054685681&partnerID=8YFLogxK

U2 - 10.3390/app8091692

DO - 10.3390/app8091692

M3 - Article

AN - SCOPUS:85054685681

SN - 2076-3417

VL - 8

SP - 1

EP - 10

JO - Applied Sciences

JF - Applied Sciences

IS - 9

M1 - 1692

ER -

Post-sputtering heat treatments of molybdenum on silicon wafer

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this