Post-sputtering heat treatments of molybdenum on silicon wafer

Xuguang Jia*, Ziyun Lin, Terry Chien-Jen Yang, Binesh Puthen-Veettil, Lingfeng Wu, Gavin Conibeer, Ivan Perez-Wurfl

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)
11 Downloads (Pure)


This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.

Original languageEnglish
Article number1692
Pages (from-to)1-10
Number of pages10
JournalApplied Sciences (Switzerland)
Issue number9
Publication statusPublished - 18 Sep 2018

Bibliographical note

Copyright the Author(s) 2018. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.


  • Si quantum dots
  • solar cells
  • molybdenum
  • high temperature annealing

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