Potential performance of "Out-of-Sequence" multi-junction solar cells

III-V on virtual Ge substrates with active Si bottom sub-cell

Ibraheem Almansouri, Stephen Bremner, Anita Ho-Baillie, Martin A. Green

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

We look at the design of a novel Out-of-Sequence (OoS) tandem where a GaInP/GaAs top junction is stacked on top of a very thin Ge active cell which in turn is stacked on top of an active bottom junction Si substrate. We have also investigated the conversion efficiency of an upright metamorphic Gallium Indium Phosphide (GaInP)/Gallium Arnside (GaAs)/Germanium (Ge)/Silicon (Si) tandem structure where Ge acts purely as a buffer layer between the Si and upper III-V layers. The impact of various Ge buffer layer thicknesses on the tandem efficiency and the performance of tandem stack structure using different optical generation schemes have been investigated. Finally, we determine under what conditions the Ge should be an active cell in the stack, rather than a simple parasitic absorber layer in the structure.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages5
ISBN (Electronic)9781479979448, 9781479979431
DOIs
Publication statusPublished - 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period14/06/1519/06/15

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    Almansouri, I., Bremner, S., Ho-Baillie, A., & Green, M. A. (2015). Potential performance of "Out-of-Sequence" multi-junction solar cells: III-V on virtual Ge substrates with active Si bottom sub-cell. In 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2015.7356243