Abstract
We look at the design of a novel Out-of-Sequence (OoS) tandem where a GaInP/GaAs top junction is stacked on top of a very thin Ge active cell which in turn is stacked on top of an active bottom junction Si substrate. We have also investigated the conversion efficiency of an upright metamorphic Gallium Indium Phosphide (GaInP)/Gallium Arnside (GaAs)/Germanium (Ge)/Silicon (Si) tandem structure where Ge acts purely as a buffer layer between the Si and upper III-V layers. The impact of various Ge buffer layer thicknesses on the tandem efficiency and the performance of tandem stack structure using different optical generation schemes have been investigated. Finally, we determine under what conditions the Ge should be an active cell in the stack, rather than a simple parasitic absorber layer in the structure.
Original language | English |
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Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Number of pages | 5 |
ISBN (Electronic) | 9781479979448, 9781479979431 |
DOIs | |
Publication status | Published - 2015 |
Externally published | Yes |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |