Precise tuning chemistry and tailoring defects of graphene oxide films by low energy ion beam irradiation

Yibin Wei, Zeljko Pastuovic, Timothy Murphy, Damian B. Gore

    Research output: Contribution to journalArticle

    Abstract

    Precise tuning chemistry and tailoring nanopores of graphene oxide (GO) thin films are vital for their application for liquid and gas separation. In this work, ultra-thin GO films with thicknesses of about 150 nm were prepared and then modified by a low energy carbon ion beam with ion fluences ranging from 1 × 1015 ions·cm-2 to 1 × 1017 ions·cm-2. An ion fluence of 1 × 1016 ions·cm-2 is a threshold for the changes to the surface geometry (i.e. the chemical state and the consequent morphology) of the GO films. Moreover, X-ray photoelectron spectroscopy (XPS) reveals that oxygen loss in ion beam-induced reduction of GO films was mainly by the elimination of the unstable C=O species. Raman spectroscopy indicates that a mass of defects with a mean defect distance of about 1.4 nm was generated in GO films by C+ irradiation. According to SRIM simulation, an average of 208 carbon vacancies were created in the GO film per impinging C+. These results suggest that low energy carbon ion beam irradiation is promising for simultaneously reducing and drilling nanoscale pores on GO surfaces in a controllable manner, which could be used for engineering GO-based separation membranes.
    Original languageEnglish
    Article number144651
    Pages (from-to)1-11
    Number of pages11
    JournalApplied Surface Science
    Volume505
    DOIs
    Publication statusPublished - 1 Mar 2020

    Keywords

    • Graphene oxide
    • Ultrathin film
    • Ion beam
    • Defect
    • Raman
    • SRIM

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