TY - JOUR
T1 - Precision threshold current measurement for semiconductor lasers based on relaxation oscillation frequency
AU - Kane, D. M.
AU - Toomey, Joshua P.
N1 - Copyright 2009 IEEE. Reprinted from Journal of lightwave technology, Volume 27, Issue 15, 2949-2952. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2009/8/1
Y1 - 2009/8/1
N2 - The soft turn-ON of semiconductor lasers leads to uncertainty in defining and measuring the laser threshold injection current, Ith. Previously, practical calculation algorithms have been developed to achieve high-accuracy measurement of a clearly defined and reproducible quantity which is called Ith. We demonstrate a new and higher accuracy measurement of Ith using the dependency of the relaxation oscillation frequency on injection current, as compared to the existing standardized approaches. Further, if it is accepted that relaxation oscillations do not occur below laser threshold, this may be regarded as a more fundamentally based definition and measurement method to determine the laser threshold injection current in a semiconductor laser. The method may also be applicable to other types of lasers.
AB - The soft turn-ON of semiconductor lasers leads to uncertainty in defining and measuring the laser threshold injection current, Ith. Previously, practical calculation algorithms have been developed to achieve high-accuracy measurement of a clearly defined and reproducible quantity which is called Ith. We demonstrate a new and higher accuracy measurement of Ith using the dependency of the relaxation oscillation frequency on injection current, as compared to the existing standardized approaches. Further, if it is accepted that relaxation oscillations do not occur below laser threshold, this may be regarded as a more fundamentally based definition and measurement method to determine the laser threshold injection current in a semiconductor laser. The method may also be applicable to other types of lasers.
UR - http://www.scopus.com/inward/record.url?scp=67849124080&partnerID=8YFLogxK
U2 - 10.1109/JLT.2009.2019112
DO - 10.1109/JLT.2009.2019112
M3 - Article
AN - SCOPUS:67849124080
SN - 0733-8724
VL - 27
SP - 2949
EP - 2952
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
IS - 15
ER -