Predictive effective mobility model for FDSOI transistors using technology parameters

Pragya Kushwaha, Harshit Agarwal, Yogesh S. Chauhan, Mandar Bhoir, Nihar R. Mohapatra, Sourabh Khandelwal, Juan P. Duarte, Yen Kai Lin, Huan Lin Chang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

6 Citations (Scopus)

Abstract

The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (Eeff) changes it's sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between Eeff and carrier distribution. This is the first time, when a predictive mobility model for wide range of back gate biases, solely dependent on technology parameters (front and back gate oxide thickness Tox/box, threshold voltage Vth, front/back gate bias Vfg/bg and flat-band voltage Vfb) is proposed. This predictive mobility model allows the user to predict the deviation in device characteristics due to the variations in the device structure.

Original languageEnglish
Title of host publicationEDSSC 2016
Subtitle of host publicationIEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages448-451
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Externally publishedYes
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Other

Other2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

Keywords

  • FDSOI
  • Mobility
  • Model
  • Split-CV

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