Preparation and characterization of Cu2ZnGeS4                         thin films by sulfurizing reactively sputtered precursors

Jian Chen; Lianbo Zhao; Fangyang Liu; Shujuan Huang; Xiaojing Hao

doi:10.1109/COMMAD.2014.7038705

Preparation and characterization of Cu₂ZnGeS₄ thin films by sulfurizing reactively sputtered precursors

Jian Chen, Lianbo Zhao, Fangyang Liu, Shujuan Huang, Xiaojing Hao

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

Cu₂ZnGeS₄ (CZGS) thin films were first grown by reactive magnetron co-sputtering technique and post sulfurization. Raman and X-ray diffraction (XRD) examination confirm the synthesized films to be tetragonal stannite CZGS together with ZnS secondary phase. The effect of two manufacturing conditions was investigated: sputtering pressure for precursor deposition and sulfurization temperature. By decreasing the sputtering pressure, the CZGS grain size in the sulfurized films is found to be increased. By increasing the sulfurization temperature, the CZGS grain size is also increased. However, serious voids and pinholes are found in the sample undergoing high sulfurization temperature. The formation of voids and pinholes can be explained by Ge loss via Ge sulfides sublimation. Besides, the M0S₂ layer thickness is found dramatically increased after high-temperature sulfurization process.

Original language	English
Title of host publication	COMMAD 2014 Conference proceedings
Subtitle of host publication	Conference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December 2014, The University of Western Australia, Perth, Australia
Editors	Lorenzo Faraone, Mariusz Martyniuk
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	254-257
Number of pages	4
ISBN (Electronic)	9781479968688
ISBN (Print)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038705
Publication status	Published - 2014
Externally published	Yes
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name
ISSN (Print)	1097-2137
ISSN (Electronic)	2377-5505

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

Keywords

Cu₂ZnGeS₄
reactive sputtering
sputtering pressure
sulfurization temperature

Access to Document

10.1109/COMMAD.2014.7038705

Cite this

Chen, J., Zhao, L., Liu, F., Huang, S., & Hao, X. (2014). Preparation and characterization of Cu₂ZnGeS₄ thin films by sulfurizing reactively sputtered precursors. In L. Faraone, & M. Martyniuk (Eds.), COMMAD 2014 Conference proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December 2014, The University of Western Australia, Perth, Australia (pp. 254-257). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2014.7038705

Chen, Jian ; Zhao, Lianbo ; Liu, Fangyang et al. / Preparation and characterization of Cu₂ZnGeS₄ thin films by sulfurizing reactively sputtered precursors. COMMAD 2014 Conference proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December 2014, The University of Western Australia, Perth, Australia. editor / Lorenzo Faraone ; Mariusz Martyniuk. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2014. pp. 254-257

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title = "Preparation and characterization of Cu2ZnGeS4 thin films by sulfurizing reactively sputtered precursors",

abstract = " Cu2ZnGeS4 (CZGS) thin films were first grown by reactive magnetron co-sputtering technique and post sulfurization. Raman and X-ray diffraction (XRD) examination confirm the synthesized films to be tetragonal stannite CZGS together with ZnS secondary phase. The effect of two manufacturing conditions was investigated: sputtering pressure for precursor deposition and sulfurization temperature. By decreasing the sputtering pressure, the CZGS grain size in the sulfurized films is found to be increased. By increasing the sulfurization temperature, the CZGS grain size is also increased. However, serious voids and pinholes are found in the sample undergoing high sulfurization temperature. The formation of voids and pinholes can be explained by Ge loss via Ge sulfides sublimation. Besides, the M0S2 layer thickness is found dramatically increased after high-temperature sulfurization process. ",

keywords = "Cu₂ZnGeS₄, reactive sputtering, sputtering pressure, sulfurization temperature",

author = "Jian Chen and Lianbo Zhao and Fangyang Liu and Shujuan Huang and Xiaojing Hao",

year = "2014",

doi = "10.1109/COMMAD.2014.7038705",

language = "English",

isbn = "9781479968671",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "254--257",

editor = "Lorenzo Faraone and Mariusz Martyniuk",

booktitle = "COMMAD 2014 Conference proceedings",

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note = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

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Chen, J, Zhao, L, Liu, F, Huang, S & Hao, X 2014, Preparation and characterization of Cu₂ZnGeS₄ thin films by sulfurizing reactively sputtered precursors. in L Faraone & M Martyniuk (eds), COMMAD 2014 Conference proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December 2014, The University of Western Australia, Perth, Australia. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 254-257, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038705

Preparation and characterization of Cu₂ZnGeS₄ thin films by sulfurizing reactively sputtered precursors. / Chen, Jian; Zhao, Lianbo; Liu, Fangyang et al.

COMMAD 2014 Conference proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December 2014, The University of Western Australia, Perth, Australia. ed. / Lorenzo Faraone; Mariusz Martyniuk. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 254-257.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Huang, Shujuan

AU - Hao, Xiaojing

PY - 2014

Y1 - 2014

N2 - Cu2ZnGeS4 (CZGS) thin films were first grown by reactive magnetron co-sputtering technique and post sulfurization. Raman and X-ray diffraction (XRD) examination confirm the synthesized films to be tetragonal stannite CZGS together with ZnS secondary phase. The effect of two manufacturing conditions was investigated: sputtering pressure for precursor deposition and sulfurization temperature. By decreasing the sputtering pressure, the CZGS grain size in the sulfurized films is found to be increased. By increasing the sulfurization temperature, the CZGS grain size is also increased. However, serious voids and pinholes are found in the sample undergoing high sulfurization temperature. The formation of voids and pinholes can be explained by Ge loss via Ge sulfides sublimation. Besides, the M0S2 layer thickness is found dramatically increased after high-temperature sulfurization process.

AB - Cu2ZnGeS4 (CZGS) thin films were first grown by reactive magnetron co-sputtering technique and post sulfurization. Raman and X-ray diffraction (XRD) examination confirm the synthesized films to be tetragonal stannite CZGS together with ZnS secondary phase. The effect of two manufacturing conditions was investigated: sputtering pressure for precursor deposition and sulfurization temperature. By decreasing the sputtering pressure, the CZGS grain size in the sulfurized films is found to be increased. By increasing the sulfurization temperature, the CZGS grain size is also increased. However, serious voids and pinholes are found in the sample undergoing high sulfurization temperature. The formation of voids and pinholes can be explained by Ge loss via Ge sulfides sublimation. Besides, the M0S2 layer thickness is found dramatically increased after high-temperature sulfurization process.

KW - Cu₂ZnGeS₄

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Y2 - 14 December 2014 through 17 December 2014

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Chen J, Zhao L, Liu F, Huang S, Hao X. Preparation and characterization of Cu₂ZnGeS₄ thin films by sulfurizing reactively sputtered precursors. In Faraone L, Martyniuk M, editors, COMMAD 2014 Conference proceedings: Conference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December 2014, The University of Western Australia, Perth, Australia. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2014. p. 254-257 https://doi.org/10.1109/COMMAD.2014.7038705