Preparation and characterization of Cu2ZnGeS4 thin films by sulfurizing reactively sputtered precursors

Jian Chen, Lianbo Zhao, Fangyang Liu, Shujuan Huang, Xiaojing Hao

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)


Cu2ZnGeS4 (CZGS) thin films were first grown by reactive magnetron co-sputtering technique and post sulfurization. Raman and X-ray diffraction (XRD) examination confirm the synthesized films to be tetragonal stannite CZGS together with ZnS secondary phase. The effect of two manufacturing conditions was investigated: sputtering pressure for precursor deposition and sulfurization temperature. By decreasing the sputtering pressure, the CZGS grain size in the sulfurized films is found to be increased. By increasing the sulfurization temperature, the CZGS grain size is also increased. However, serious voids and pinholes are found in the sample undergoing high sulfurization temperature. The formation of voids and pinholes can be explained by Ge loss via Ge sulfides sublimation. Besides, the M0S2 layer thickness is found dramatically increased after high-temperature sulfurization process.

Original languageEnglish
Title of host publicationCOMMAD 2014 Conference proceedings
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices, 14-17 December 2014, The University of Western Australia, Perth, Australia
EditorsLorenzo Faraone, Mariusz Martyniuk
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781479968688
ISBN (Print)9781479968671
Publication statusPublished - 2014
Externally publishedYes
Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
Duration: 14 Dec 201417 Dec 2014

Publication series

ISSN (Print)1097-2137
ISSN (Electronic)2377-5505


Conference2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014


  • Cu₂ZnGeS₄
  • reactive sputtering
  • sputtering pressure
  • sulfurization temperature


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