Procedure for inverse modeling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves

S. J. Mahon*, D. J. Skellern

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

A procedure for the inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves is reported for the first time. This procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, physical gate length and source resistance to be accurately obtained.

Original languageEnglish
Pages (from-to)81-82
Number of pages2
JournalElectronics Letters
Volume27
Issue number1
DOIs
Publication statusPublished - Jan 1991

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