Abstract
A procedure for the inverse modelling of GaAs/AlGaAs HEMT structures from DC I/V characteristic curves is reported for the first time. This procedure allows important structural parameters, including the aluminum fraction, dopant density, doped layer thickness, physical gate length and source resistance to be accurately obtained.
Original language | English |
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Pages (from-to) | 81-82 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 27 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1991 |