Progress at Macquarie University’s low temperature nitride growth facility

K. S. A. Butcher; M. Wintrebert-Fouquet; P. P.-T. Chen; Z. Zheng; I. L. Guy; T. L. Tansley

Progress at Macquarie University’s low temperature nitride growth facility

K. S. A. Butcher, M. Wintrebert-Fouquet, P. P.-T. Chen, Z. Zheng, I. L. Guy, T. L. Tansley

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

The Low Temperature Nitride Growth Facility has been formed with the goal of developing novel growth and analysis techniques that may be suitable for the growth of group III nitride materials at temperatures below 650°C. The new growth facility includes three thin film growth reactors, a separate clean room facility, and a plethora of characterisation and device fabrication tools. This paper will outline the present status of the facility but will also highlight some of the recent work by the facilities staff. This includes, the development of an AFM based piezoelectric measurement system; the development of sub-growth temperature re-crystallisation techniques for the improvement of low temperature grown gallium nitride; progress in the development of indium nitride – a material pioneered in Australia. What is the band-gap of indium nitride? Is it 0.7 eV or is it 1.89 eV? And finally the development of ultra-high resistivity aluminium nitride layers grown at room temperature is reviewed.

Original language	English
Title of host publication	Proceedings of the 27th annual ANZIP condensed matter and materials meeting
Editors	John Cashion, Trevor Finlayson, David Paganin, Andrew Smith, Gordon Troup
Place of Publication	Australia
Publisher	Australian Institute of Physics
Number of pages	6
ISBN (Print)	0959806466
Publication status	Published - 2003
Event	Annual Australian and New Zealand Institutes of Physics Condensed Matter and Materials Meeting (27th : 2003) - Wagga Wagga, NSW Duration: 4 Feb 2003 → 7 Feb 2003

Conference

Conference	Annual Australian and New Zealand Institutes of Physics Condensed Matter and Materials Meeting (27th : 2003)
City	Wagga Wagga, NSW
Period	4/02/03 → 7/02/03

Access to Document

http://www.aip.org.au/wagga2003/WW03_07.pdf

Cite this

Butcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. P.-T., Zheng, Z., Guy, I. L., & Tansley, T. L. (2003). Progress at Macquarie University’s low temperature nitride growth facility. In J. Cashion, T. Finlayson, D. Paganin, A. Smith, & G. Troup (Eds.), Proceedings of the 27th annual ANZIP condensed matter and materials meeting Australian Institute of Physics. http://www.aip.org.au/wagga2003/WW03_07.pdf

@inproceedings{c6521721643a42a4b058ac2d89540bc6,

title = "Progress at Macquarie University{\textquoteright}s low temperature nitride growth facility",

abstract = "The Low Temperature Nitride Growth Facility has been formed with the goal of developing novel growth and analysis techniques that may be suitable for the growth of group III nitride materials at temperatures below 650°C. The new growth facility includes three thin film growth reactors, a separate clean room facility, and a plethora of characterisation and device fabrication tools. This paper will outline the present status of the facility but will also highlight some of the recent work by the facilities staff. This includes, the development of an AFM based piezoelectric measurement system; the development of sub-growth temperature re-crystallisation techniques for the improvement of low temperature grown gallium nitride; progress in the development of indium nitride – a material pioneered in Australia. What is the band-gap of indium nitride? Is it 0.7 eV or is it 1.89 eV? And finally the development of ultra-high resistivity aluminium nitride layers grown at room temperature is reviewed.",

author = "Butcher, {K. S. A.} and M. Wintrebert-Fouquet and Chen, {P. P.-T.} and Z. Zheng and Guy, {I. L.} and Tansley, {T. L.}",

year = "2003",

language = "English",

isbn = "0959806466",

editor = "John Cashion and Trevor Finlayson and David Paganin and Andrew Smith and Gordon Troup",

booktitle = "Proceedings of the 27th annual ANZIP condensed matter and materials meeting",

publisher = "Australian Institute of Physics",

address = "Australia",

note = "Annual Australian and New Zealand Institutes of Physics Condensed Matter and Materials Meeting (27th : 2003) ; Conference date: 04-02-2003 Through 07-02-2003",

}

Butcher, KSA, Wintrebert-Fouquet, M, Chen, PP-T, Zheng, Z, Guy, IL & Tansley, TL 2003, Progress at Macquarie University’s low temperature nitride growth facility. in J Cashion, T Finlayson, D Paganin, A Smith & G Troup (eds), Proceedings of the 27th annual ANZIP condensed matter and materials meeting. Australian Institute of Physics, Australia, Annual Australian and New Zealand Institutes of Physics Condensed Matter and Materials Meeting (27th : 2003), Wagga Wagga, NSW, 4/02/03. <http://www.aip.org.au/wagga2003/WW03_07.pdf>

Progress at Macquarie University’s low temperature nitride growth facility. / Butcher, K. S. A.; Wintrebert-Fouquet, M.; Chen, P. P.-T. et al.
Proceedings of the 27th annual ANZIP condensed matter and materials meeting. ed. / John Cashion; Trevor Finlayson; David Paganin; Andrew Smith; Gordon Troup. Australia: Australian Institute of Physics, 2003.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Progress at Macquarie University’s low temperature nitride growth facility

AU - Butcher, K. S. A.

AU - Wintrebert-Fouquet, M.

AU - Chen, P. P.-T.

AU - Zheng, Z.

AU - Guy, I. L.

AU - Tansley, T. L.

PY - 2003

Y1 - 2003

N2 - The Low Temperature Nitride Growth Facility has been formed with the goal of developing novel growth and analysis techniques that may be suitable for the growth of group III nitride materials at temperatures below 650°C. The new growth facility includes three thin film growth reactors, a separate clean room facility, and a plethora of characterisation and device fabrication tools. This paper will outline the present status of the facility but will also highlight some of the recent work by the facilities staff. This includes, the development of an AFM based piezoelectric measurement system; the development of sub-growth temperature re-crystallisation techniques for the improvement of low temperature grown gallium nitride; progress in the development of indium nitride – a material pioneered in Australia. What is the band-gap of indium nitride? Is it 0.7 eV or is it 1.89 eV? And finally the development of ultra-high resistivity aluminium nitride layers grown at room temperature is reviewed.

AB - The Low Temperature Nitride Growth Facility has been formed with the goal of developing novel growth and analysis techniques that may be suitable for the growth of group III nitride materials at temperatures below 650°C. The new growth facility includes three thin film growth reactors, a separate clean room facility, and a plethora of characterisation and device fabrication tools. This paper will outline the present status of the facility but will also highlight some of the recent work by the facilities staff. This includes, the development of an AFM based piezoelectric measurement system; the development of sub-growth temperature re-crystallisation techniques for the improvement of low temperature grown gallium nitride; progress in the development of indium nitride – a material pioneered in Australia. What is the band-gap of indium nitride? Is it 0.7 eV or is it 1.89 eV? And finally the development of ultra-high resistivity aluminium nitride layers grown at room temperature is reviewed.

M3 - Conference proceeding contribution

SN - 0959806466

BT - Proceedings of the 27th annual ANZIP condensed matter and materials meeting

A2 - Cashion, John

A2 - Finlayson, Trevor

A2 - Paganin, David

A2 - Smith, Andrew

A2 - Troup, Gordon

PB - Australian Institute of Physics

CY - Australia

T2 - Annual Australian and New Zealand Institutes of Physics Condensed Matter and Materials Meeting (27th : 2003)

Y2 - 4 February 2003 through 7 February 2003

ER -

Progress at Macquarie University’s low temperature nitride growth facility

Abstract

Conference

Access to Document

Fingerprint

Cite this