Progress toward a Si-plus architecture

epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics

Tyler J. Grassman, John A. Carlin, Santino D. Carnevale, Ibraheem Al Mansouri, Hamid Mehrvarz, Stephen Bremner, Anita Ho-Baillie, Elisa García-Tabarés, Ignacio Rey-Stolle, Martin A. Green, Steven A. Ringe

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si multijunction solar cells. Si bulk minority carrier lifetime was found to track the epitaxial process, with initial degradation followed by full recovery. Fabricated test devices from in-situ (all-epitaxial) GaP/Si structures yielded good preliminary performance characteristics and demonstrate great promise for the epitaxial sub-cell approach. Additional test structures based on ex-situ diffusion processed solar wafers demonstrate the impact and importance of back surface field layers for such sub-cells.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages3439-3442
Number of pages4
Volume2
ISBN (Electronic)9781509037797
ISBN (Print)9781509037803
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialists Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Conference

Conference40th IEEE Photovoltaic Specialists Conference, PVSC 2014
CountryUnited States
CityDenver
Period8/06/1413/06/14

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