Progress toward a Si-plus architecture

epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics

Tyler J. Grassman, John A. Carlin, Santino D. Carnevale, Ibraheem Al Mansouri, Hamid Mehrvarz, Stephen Bremner, Anita Ho-Baillie, Elisa García-Tabarés, Ignacio Rey-Stolle, Martin A. Green, Steven A. Ringe

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution


GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si multijunction solar cells. Si bulk minority carrier lifetime was found to track the epitaxial process, with initial degradation followed by full recovery. Fabricated test devices from in-situ (all-epitaxial) GaP/Si structures yielded good preliminary performance characteristics and demonstrate great promise for the epitaxial sub-cell approach. Additional test structures based on ex-situ diffusion processed solar wafers demonstrate the impact and importance of back surface field layers for such sub-cells.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781509037797
ISBN (Print)9781509037803
Publication statusPublished - 2014
Externally publishedYes
Event40th IEEE Photovoltaic Specialists Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialists Conference, PVSC 2014
CountryUnited States

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