Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics

Tyler J. Grassman; John A. Carlin; Santino D. Carnevale; Ibraheem Al Mansouri; Hamid Mehrvarz; Stephen Bremner; Anita Ho-Baillie; Elisa García-Tabarés; Ignacio Rey-Stolle; Martin A. Green; Steven A. Ringe

doi:10.1109/PVSC-Vol2.2014.7588253

Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics

Tyler J. Grassman, John A. Carlin, Santino D. Carnevale, Ibraheem Al Mansouri, Hamid Mehrvarz, Stephen Bremner, Anita Ho-Baillie, Elisa García-Tabarés, Ignacio Rey-Stolle, Martin A. Green, Steven A. Ringe

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si multijunction solar cells. Si bulk minority carrier lifetime was found to track the epitaxial process, with initial degradation followed by full recovery. Fabricated test devices from in-situ (all-epitaxial) GaP/Si structures yielded good preliminary performance characteristics and demonstrate great promise for the epitaxial sub-cell approach. Additional test structures based on ex-situ diffusion processed solar wafers demonstrate the impact and importance of back surface field layers for such sub-cells.

Original language	English
Title of host publication	2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	3439-3442
Number of pages	4
Volume	2
ISBN (Electronic)	9781509037797
ISBN (Print)	9781509037803
DOIs	https://doi.org/10.1109/PVSC-Vol2.2014.7588253
Publication status	Published - 2014
Externally published	Yes
Event	40th IEEE Photovoltaic Specialists Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialists Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

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10.1109/PVSC-Vol2.2014.7588253

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Grassman, T. J., Carlin, J. A., Carnevale, S. D., Al Mansouri, I., Mehrvarz, H., Bremner, S., Ho-Baillie, A., García-Tabarés, E., Rey-Stolle, I., Green, M. A., & Ringe, S. A. (2014). Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics. In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC) (Vol. 2, pp. 3439-3442). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC-Vol2.2014.7588253

@inproceedings{9e541be2d98d40af983431414d0a4b72,

title = "Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics",

abstract = "GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si multijunction solar cells. Si bulk minority carrier lifetime was found to track the epitaxial process, with initial degradation followed by full recovery. Fabricated test devices from in-situ (all-epitaxial) GaP/Si structures yielded good preliminary performance characteristics and demonstrate great promise for the epitaxial sub-cell approach. Additional test structures based on ex-situ diffusion processed solar wafers demonstrate the impact and importance of back surface field layers for such sub-cells.",

author = "Grassman, {Tyler J.} and Carlin, {John A.} and Carnevale, {Santino D.} and {Al Mansouri}, Ibraheem and Hamid Mehrvarz and Stephen Bremner and Anita Ho-Baillie and Elisa Garc{\'i}a-Tabar{\'e}s and Ignacio Rey-Stolle and Green, {Martin A.} and Ringe, {Steven A.}",

year = "2014",

doi = "10.1109/PVSC-Vol2.2014.7588253",

language = "English",

isbn = "9781509037803",

volume = "2",

pages = "3439--3442",

booktitle = "2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "40th IEEE Photovoltaic Specialists Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

}

Grassman, TJ, Carlin, JA, Carnevale, SD, Al Mansouri, I, Mehrvarz, H, Bremner, S, Ho-Baillie, A, García-Tabarés, E, Rey-Stolle, I, Green, MA & Ringe, SA 2014, Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics. in 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). vol. 2, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 3439-3442, 40th IEEE Photovoltaic Specialists Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC-Vol2.2014.7588253

Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics. / Grassman, Tyler J.; Carlin, John A.; Carnevale, Santino D. et al.
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). Vol. 2 Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 3439-3442.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Progress toward a Si-plus architecture

T2 - 40th IEEE Photovoltaic Specialists Conference, PVSC 2014

AU - Grassman, Tyler J.

AU - Carlin, John A.

AU - Carnevale, Santino D.

AU - Al Mansouri, Ibraheem

AU - Mehrvarz, Hamid

AU - Bremner, Stephen

AU - Ho-Baillie, Anita

AU - García-Tabarés, Elisa

AU - Rey-Stolle, Ignacio

AU - Green, Martin A.

AU - Ringe, Steven A.

PY - 2014

Y1 - 2014

N2 - GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si multijunction solar cells. Si bulk minority carrier lifetime was found to track the epitaxial process, with initial degradation followed by full recovery. Fabricated test devices from in-situ (all-epitaxial) GaP/Si structures yielded good preliminary performance characteristics and demonstrate great promise for the epitaxial sub-cell approach. Additional test structures based on ex-situ diffusion processed solar wafers demonstrate the impact and importance of back surface field layers for such sub-cells.

AB - GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si multijunction solar cells. Si bulk minority carrier lifetime was found to track the epitaxial process, with initial degradation followed by full recovery. Fabricated test devices from in-situ (all-epitaxial) GaP/Si structures yielded good preliminary performance characteristics and demonstrate great promise for the epitaxial sub-cell approach. Additional test structures based on ex-situ diffusion processed solar wafers demonstrate the impact and importance of back surface field layers for such sub-cells.

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DO - 10.1109/PVSC-Vol2.2014.7588253

M3 - Conference proceeding contribution

SN - 9781509037803

VL - 2

SP - 3439

EP - 3442

BT - 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

Y2 - 8 June 2014 through 13 June 2014

ER -

Grassman TJ, Carlin JA, Carnevale SD, Al Mansouri I, Mehrvarz H, Bremner S et al. Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics. In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). Vol. 2. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2014. p. 3439-3442 doi: 10.1109/PVSC-Vol2.2014.7588253

Progress toward a Si-plus architecture: epitaxially-integrable Si sub-cells for III-V/Si multijunction photovoltaics

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