Properties of InN grown by remote plasma enhanced chemical vapour deposition

Patrick P. -T. Chen, K. Scott A Butcher, Marie Wintrebert-Fouquet, Kathryn E. Prince

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

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Abstract

We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical absorption spectra show a broad range of the apparent band-gap from 0.90 to 2.18 eV, depending on the growth temperature. These two extreme apparent band-gaps are similar to the controversial values of 0.7 and 1.9 eV quoted in the InN band-gap debate [1-3]. Along with optical absorption results, the influence of growth temperature on growth rate, and carrier concentration is discussed. The correlations between the carrier concentration, and shallow-donors (oxygen and hydrogen) in InN are also analysed.

Original languageEnglish
Title of host publication2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04
Subtitle of host publicationProceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages85-88
Number of pages4
ISBN (Print)0780388208
DOIs
Publication statusPublished - 2005
EventCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia
Duration: 8 Dec 200410 Dec 2004

Other

OtherCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
CountryAustralia
CityBribane, QLD
Period8/12/0410/12/04

Bibliographical note

Copyright 2005 IEEE. Reprinted from Proceedings of the 2004 Conference on Optoelectronic and Microelectronic Materials and Devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

  • InN, band gap
  • growth rate
  • carrier concentration
  • Burstein-Moss effect
  • oxygen incorporation

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