Properties of InN grown by remote plasma enhanced chemical vapour deposition

Patrick P. -T. Chen; K. Scott A Butcher; Marie Wintrebert-Fouquet; Kathryn E. Prince

doi:10.1109/COMMAD.2004.1577498

Properties of InN grown by remote plasma enhanced chemical vapour deposition

Patrick P. -T. Chen, K. Scott A Butcher, Marie Wintrebert-Fouquet, Kathryn E. Prince

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Abstract

We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical absorption spectra show a broad range of the apparent band-gap from 0.90 to 2.18 eV, depending on the growth temperature. These two extreme apparent band-gaps are similar to the controversial values of 0.7 and 1.9 eV quoted in the InN band-gap debate [1-3]. Along with optical absorption results, the influence of growth temperature on growth rate, and carrier concentration is discussed. The correlations between the carrier concentration, and shallow-donors (oxygen and hydrogen) in InN are also analysed.

Original language	English
Title of host publication	2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04
Subtitle of host publication	Proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	85-88
Number of pages	4
ISBN (Print)	0780388208
DOIs	https://doi.org/10.1109/COMMAD.2004.1577498
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Other

Other	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

Bibliographical note

Copyright 2005 IEEE. Reprinted from Proceedings of the 2004 Conference on Optoelectronic and Microelectronic Materials and Devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

InN, band gap
growth rate
carrier concentration
Burstein-Moss effect
oxygen incorporation

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10.1109/COMMAD.2004.1577498

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Cite this

Chen, P. P. .-T., Butcher, K. S. A., Wintrebert-Fouquet, M., & Prince, K. E. (2005). Properties of InN grown by remote plasma enhanced chemical vapour deposition. In 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings (pp. 85-88). Article 1577498 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2004.1577498

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Chen, PP-T, Butcher, KSA, Wintrebert-Fouquet, M & Prince, KE 2005, Properties of InN grown by remote plasma enhanced chemical vapour deposition. in 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings., 1577498, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 85-88, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577498

Properties of InN grown by remote plasma enhanced chemical vapour deposition. / Chen, Patrick P. -T.; Butcher, K. Scott A; Wintrebert-Fouquet, Marie et al.
2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04: Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2005. p. 85-88 1577498.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Butcher, K. Scott A

AU - Wintrebert-Fouquet, Marie

AU - Prince, Kathryn E.

N1 - Copyright 2005 IEEE. Reprinted from Proceedings of the 2004 Conference on Optoelectronic and Microelectronic Materials and Devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

PY - 2005

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N2 - We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical absorption spectra show a broad range of the apparent band-gap from 0.90 to 2.18 eV, depending on the growth temperature. These two extreme apparent band-gaps are similar to the controversial values of 0.7 and 1.9 eV quoted in the InN band-gap debate [1-3]. Along with optical absorption results, the influence of growth temperature on growth rate, and carrier concentration is discussed. The correlations between the carrier concentration, and shallow-donors (oxygen and hydrogen) in InN are also analysed.

AB - We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical absorption spectra show a broad range of the apparent band-gap from 0.90 to 2.18 eV, depending on the growth temperature. These two extreme apparent band-gaps are similar to the controversial values of 0.7 and 1.9 eV quoted in the InN band-gap debate [1-3]. Along with optical absorption results, the influence of growth temperature on growth rate, and carrier concentration is discussed. The correlations between the carrier concentration, and shallow-donors (oxygen and hydrogen) in InN are also analysed.

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KW - growth rate

KW - carrier concentration

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EP - 88

BT - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD04

PB - Institute of Electrical and Electronics Engineers (IEEE)

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T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

ER -

Properties of InN grown by remote plasma enhanced chemical vapour deposition

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