Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters

Aaron Pereira; Anthony Parker; Michael Heimlich; Neil Weste; Larry Dunleavy

doi:10.1109/APEC.2014.6803712

Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters

Aaron Pereira, Anthony Parker, Michael Heimlich, Neil Weste, Larry Dunleavy

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused degradation in the ON resistance while the traps in the bulk beneath the gate plate altered the pinch-off voltage. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse associated with change in pinch-off volatage due to bulk traps.

Original language	English
Title of host publication	2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	2874-2879
Number of pages	6
ISBN (Electronic)	9781479923250, 9781479923267
ISBN (Print)	9781479958986
DOIs	https://doi.org/10.1109/APEC.2014.6803712
Publication status	Published - Mar 2014
Event	29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC - 2014 - Fort Worth, United States Duration: 16 Mar 2014 → 20 Mar 2014

Other

Other	29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC - 2014
Country/Territory	United States
City	Fort Worth
Period	16/03/14 → 20/03/14

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10.1109/APEC.2014.6803712

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Pereira, A., Parker, A., Heimlich, M., Weste, N., & Dunleavy, L. (2014). Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters. In 2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014) (pp. 2874-2879). Article 6803712 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/APEC.2014.6803712

@inproceedings{bf1eaa6e1d8342d8a08cb92d0673a495,

title = "Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters",

abstract = "Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused degradation in the ON resistance while the traps in the bulk beneath the gate plate altered the pinch-off voltage. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse associated with change in pinch-off volatage due to bulk traps.",

author = "Aaron Pereira and Anthony Parker and Michael Heimlich and Neil Weste and Larry Dunleavy",

year = "2014",

month = mar,

doi = "10.1109/APEC.2014.6803712",

language = "English",

isbn = "9781479958986",

pages = "2874--2879",

booktitle = "2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC - 2014 ; Conference date: 16-03-2014 Through 20-03-2014",

}

Pereira, A, Parker, A, Heimlich, M, Weste, N & Dunleavy, L 2014, Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters. in 2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014)., 6803712, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 2874-2879, 29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC - 2014, Fort Worth, Texas, United States, 16/03/14. https://doi.org/10.1109/APEC.2014.6803712

Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters. / Pereira, Aaron; Parker, Anthony; Heimlich, Michael et al.
2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 2874-2879 6803712.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters

AU - Pereira, Aaron

AU - Parker, Anthony

AU - Heimlich, Michael

AU - Weste, Neil

AU - Dunleavy, Larry

PY - 2014/3

Y1 - 2014/3

N2 - Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused degradation in the ON resistance while the traps in the bulk beneath the gate plate altered the pinch-off voltage. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse associated with change in pinch-off volatage due to bulk traps.

AB - Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused degradation in the ON resistance while the traps in the bulk beneath the gate plate altered the pinch-off voltage. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse associated with change in pinch-off volatage due to bulk traps.

UR - http://www.scopus.com/inward/record.url?scp=84900418484&partnerID=8YFLogxK

U2 - 10.1109/APEC.2014.6803712

DO - 10.1109/APEC.2014.6803712

M3 - Conference proceeding contribution

AN - SCOPUS:84900418484

SN - 9781479958986

SP - 2874

EP - 2879

BT - 2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC - 2014

Y2 - 16 March 2014 through 20 March 2014

ER -

Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters

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