Pulsed IV characterization of GaN HEMTs for high frequency, high efficiency integrated power converters

Aaron Pereira, Anthony Parker, Michael Heimlich, Neil Weste, Larry Dunleavy

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

3 Citations (Scopus)

Abstract

Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused degradation in the ON resistance while the traps in the bulk beneath the gate plate altered the pinch-off voltage. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse associated with change in pinch-off volatage due to bulk traps.

Original languageEnglish
Title of host publication2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages2874-2879
Number of pages6
ISBN (Electronic)9781479923250, 9781479923267
ISBN (Print)9781479958986
DOIs
Publication statusPublished - Mar 2014
Event29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC - 2014 - Fort Worth, United States
Duration: 16 Mar 201420 Mar 2014

Other

Other29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC - 2014
CountryUnited States
CityFort Worth
Period16/03/1420/03/14

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