Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts

Jing Zhao, Anita Ho-Baillie, Stephen Bremner

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

Pulsed laser deposition has been used to fabricate Nickel Oxide - Silicon heterostructures and the applicability of this structure as a hole selective contact has been assessed. Films were deposited at temperatures of 300 ° C, 500°C, 700°C, and 900°C with reflective high energy electron diffraction patterns indicating increasing crystallinity up to 500°C, but layers are amorphous at 900°C. Kelvin Probe Force Microcopy results indicate a decreasing work function for the NiOx layers with deposition temperature suggesting a reduction in p type doping level. Assessment by atomic force microscopy, contact resistivity measurements and photoluminescence imaging results indicate 900°C gives the best result for hole selective contact applications.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages2183-2186
Number of pages4
ISBN (Electronic)9781538685297
ISBN (Print)9781538685303
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

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