Pulsed measurements

Anthony E. Parker, Jonathan B. Scott, James G. Rathmell

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


    Pulsed measurements attempt to ascertain the radio-frequency (RF) behavior of transistors or other devices at an unchanging bias condition. A pulsed measurement of a transistor begins with the application of a bias to its terminals. After the bias has settled to establish a quiescent condition, it is perturbed with pulsed stimuli during which the change in terminal conditions, voltage and current, is recorded. Sometimes a RF measurement occurs during the pulse. The responses to the pulse stimuli quantify the behavior of the device at the established quiescent point. Characteristic curves, which show the relationship between terminal currents or RF parameters and the instantaneous terminal potentials, portray the behavior of the device.

    Original languageEnglish
    Title of host publicationRF and microwave circuits, measurements, and modeling
    EditorsMike Golio, Janet Golio
    Place of PublicationBoca Raton, Fla.
    PublisherCRC Press, Taylor & Francis Group
    Number of pages30
    ISBN (Electronic)9781315221878
    ISBN (Print)9780849372186
    Publication statusPublished - 2007

    Publication series

    NameThe Electrical Engineering Handbook Series


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