Pulsed measurements

Anthony E. Parker, James G. Rathmell, Jonathan B. Scott

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


    Pulsed measurements ascertain the radio-frequency (RF) behavior of transistors or other devices at an unchanging bias condition. A pulsed measurement of a transistor begins with the application of a bias to its terminals. After the bias has settled to establish a quiescent condition, it is perturbed with pulsed stimuli during which the change in terminal conditions, voltage and current, is recorded. Sometimes a RF measurement occurs during the pulse. The responses to the pulse stimuli quantify the behavior of the device at the established quiescent point. Characteristic curves, which show the relationship between terminal currents or RF parameters and the instantaneous terminal potentials, portray the behavior of the device.

    Original languageEnglish
    Title of host publicationCommercial wireless circuits and components handbook
    EditorsMike Golio
    Place of PublicationBoca Raton Florida
    PublisherCRC Press, Taylor & Francis Group
    Number of pages29
    ISBN (Electronic)9781420039962
    ISBN (Print)9780849315640
    Publication statusPublished - 2003


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