Abstract
Pulsed measurements ascertain the radio-frequency (RF) behavior of transistors or other devices at an unchanging bias condition. A pulsed measurement of a transistor begins with the application of a bias to its terminals. After the bias has settled to establish a quiescent condition, it is perturbed with pulsed stimuli during which the change in terminal conditions, voltage and current, is recorded. Sometimes a RF measurement occurs during the pulse. The responses to the pulse stimuli quantify the behavior of the device at the established quiescent point. Characteristic curves, which show the relationship between terminal currents or RF parameters and the instantaneous terminal potentials, portray the behavior of the device.
| Original language | English |
|---|---|
| Title of host publication | Commercial wireless circuits and components handbook |
| Editors | Mike Golio |
| Place of Publication | Boca Raton Florida |
| Publisher | CRC Press, Taylor & Francis Group |
| Chapter | 18 |
| Pages | 18-1-18-29 |
| Number of pages | 29 |
| ISBN (Electronic) | 9781420039962 |
| ISBN (Print) | 9780849315640 |
| Publication status | Published - 2003 |