Pulsed measurements

Anthony E. Parker, James G. Rathmell, Jonathan B. Scott

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Pulsed measurements ascertain the radio-frequency (RF) behavior of transistors or other devices at an unchanging bias condition. A pulsed measurement of a transistor begins with the application of a bias to its terminals. After the bias has settled to establish a quiescent condition, it is perturbed with pulsed stimuli during which the change in terminal conditions, voltage and current, is recorded. Sometimes a RF measurement occurs during the pulse. The responses to the pulse stimuli quantify the behavior of the device at the established quiescent point. Characteristic curves, which show the relationship between terminal currents or RF parameters and the instantaneous terminal potentials, portray the behavior of the device.

Original languageEnglish
Title of host publicationCommercial wireless circuits and components handbook
EditorsMike Golio
Place of PublicationBoca Raton Florida
PublisherCRC Press, Taylor & Francis Group
Chapter18
Pages18-1-18-29
Number of pages29
ISBN (Electronic)9781420039962
ISBN (Print)9780849315640
Publication statusPublished - 2003

Fingerprint

Dive into the research topics of 'Pulsed measurements'. Together they form a unique fingerprint.

Cite this