Skip to main navigation Skip to search Skip to main content

Q and V band doublers and receivers

Emmanuelle R.O. Convert*, Simon J. Mahon, Anthony P. Fattorini, Anna Dadello, Jabra Tarazi, MacCrae G. McCulloch, Steve Hwang, James T. Harvey

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

A Q band doubler and a self-biased V band doubler are presented. The Q band doubler has an output power of 18 dBm and a PAE of 14% which is the highest PAE reported to date at this frequency to the authors' knowledge. The V band doubler produces 16 dBm near its band centre. The doublers are key subcircuits for a Q band receiver with 11 dB gain, IIP3 of 5 dBm and noise figure of approximately 3 dB, and a self-biased V band receiver with 16 dB gain and an IIP3 of 14 dBm.

Original languageEnglish
Title of host publication2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011
Place of PublicationTel Aviv, Israel
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-5
Number of pages5
ISBN (Electronic)9781457716942, 9781457716935
ISBN (Print)9781457716928
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 - Tel Aviv, Israel
Duration: 7 Nov 20119 Nov 2011

Other

Other2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011
Country/TerritoryIsrael
CityTel Aviv
Period7/11/119/11/11

Keywords

  • frequency doubler
  • HEMTs
  • MMICs
  • receivers

Fingerprint

Dive into the research topics of 'Q and V band doublers and receivers'. Together they form a unique fingerprint.

Cite this