Abstract
A Q band doubler and a self-biased V band doubler are presented. The Q band doubler has an output power of 18 dBm and a PAE of 14% which is the highest PAE reported to date at this frequency to the authors' knowledge. The V band doubler produces 16 dBm near its band centre. The doublers are key subcircuits for a Q band receiver with 11 dB gain, IIP3 of 5 dBm and noise figure of approximately 3 dB, and a self-biased V band receiver with 16 dB gain and an IIP3 of 14 dBm.
| Original language | English |
|---|---|
| Title of host publication | 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 |
| Place of Publication | Tel Aviv, Israel |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 1-5 |
| Number of pages | 5 |
| ISBN (Electronic) | 9781457716942, 9781457716935 |
| ISBN (Print) | 9781457716928 |
| DOIs | |
| Publication status | Published - 2011 |
| Externally published | Yes |
| Event | 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 - Tel Aviv, Israel Duration: 7 Nov 2011 → 9 Nov 2011 |
Other
| Other | 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 |
|---|---|
| Country/Territory | Israel |
| City | Tel Aviv |
| Period | 7/11/11 → 9/11/11 |
Keywords
- frequency doubler
- HEMTs
- MMICs
- receivers
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