Abstract
Tandem cells are one of the most effective ways of breaking the single junction Shockley-Queisser limit. Solution-processable phosphate-buffered saline (PbS) quantum dots are good candidates for producing multiple junction solar cells because of their size-tunable band gap. The intermediate recombination layer (RL) connecting the subcells in a tandem solar cell is crucial for device performance because it determines the charge recombination efficiency and electrical resistance. In this work, a solution-processed ultrathin NiO and Ag nanoparticle film serves as an intermediate layer to enhance the charge recombination efficiency in PbS QD dual-junction tandem solar cells. The champion devices with device architecture of indium tin oxide/S-ZnO/1.45 eV PbS-PbI2/PbS-EDT/NiO/Ag NP/ZnO NP/1.22 eV PbS-PbI2/PbS-EDT/Au deliver a 7.1% power conversion efficiency, which outperforms the optimized reference subcells. This result underscores the critical role of an appropriate nanocrystalline RL in producing high-performance solution-processed PbS QD tandem cells.
| Original language | English |
|---|---|
| Pages (from-to) | 2313-2318 |
| Number of pages | 6 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 12 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 15 Jan 2020 |
| Externally published | Yes |
Keywords
- tandem solar cell
- PbS quantum dots
- complementary absorption
- recombination layer
- intermediate layer
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