In this paper, we present a highly accurate and effective theoretical model to study electron transport and interference in quantum cavities with arbitrarily complex boundaries. Based on this model, a variety of quantum effects can be studied and quantified. In particular, this model provides information on the transient state of the system under study, which is important for analyzing nanometer-scale electronic devices such as high-speed quantum transistors and quantum switches.
|Number of pages||8|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 1999|