Abstract
In this paper, we present a highly accurate and effective theoretical model to study electron transport and interference in quantum cavities with arbitrarily complex boundaries. Based on this model, a variety of quantum effects can be studied and quantified. In particular, this model provides information on the transient state of the system under study, which is important for analyzing nanometer-scale electronic devices such as high-speed quantum transistors and quantum switches.
| Original language | English |
|---|---|
| Pages (from-to) | 13668-13675 |
| Number of pages | 8 |
| Journal | Physical Review B: Condensed Matter and Materials Physics |
| Volume | 60 |
| Issue number | 19 |
| Publication status | Published - 1999 |
| Externally published | Yes |