Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling

Sourabh Khandelwal; Kevin Kellogg; Cole Hill; Hugo Morales; Larry Dunleavy; Gergana Drandova; Anita Pacheco; Jose Jimenez

doi:10.1109/BCICTS45179.2019.8972721

Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling

Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

9 Citations (Scopus)

Abstract

This paper presents an analysis on the dependence of the pulsed I-V characteristics of GaN HEMTs under varying quiescent drain voltage (V_dsq) conditions, and a new model is developed for this behavior. It is found that three device parameters change with V_dsq: threshold (or cut-off) voltage, and 2-DEG densities in source and drain side access regions. It is shown that these device parameters have a non-linear dependence on V_dsq. The new model for this non-linear behavior w.r.t V_dsq is validated with measured data for six V_dsq 's for two different GaN technologies. The developed model is also exercised for large signal microwave frequency performance yielding good agreement with measurements and indicating the importance of modeling this trap-related device parameter change with V_dsq. Index Terms - MMIC, power amplifiers, Gallium Nitride, Compact models, GaN trapping effects.

Original language	English
Title of host publication	2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
ISBN (Electronic)	9781728105864
ISBN (Print)	9781728105871
DOIs	https://doi.org/10.1109/BCICTS45179.2019.8972721
Publication status	Published - 2019
Externally published	Yes
Event	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, United States Duration: 3 Nov 2019 → 6 Nov 2019

Conference

Conference	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Country/Territory	United States
City	Nashville
Period	3/11/19 → 6/11/19

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10.1109/BCICTS45179.2019.8972721

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Khandelwal, S., Kellogg, K., Hill, C., Morales, H., Dunleavy, L., Drandova, G., Pacheco, A., & Jimenez, J. (2019). Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/BCICTS45179.2019.8972721

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title = "Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling",

abstract = "This paper presents an analysis on the dependence of the pulsed I-V characteristics of GaN HEMTs under varying quiescent drain voltage (Vdsq) conditions, and a new model is developed for this behavior. It is found that three device parameters change with Vdsq: threshold (or cut-off) voltage, and 2-DEG densities in source and drain side access regions. It is shown that these device parameters have a non-linear dependence on Vdsq. The new model for this non-linear behavior w.r.t Vdsq is validated with measured data for six Vdsq 's for two different GaN technologies. The developed model is also exercised for large signal microwave frequency performance yielding good agreement with measurements and indicating the importance of modeling this trap-related device parameter change with Vdsq. Index Terms - MMIC, power amplifiers, Gallium Nitride, Compact models, GaN trapping effects.",

author = "Sourabh Khandelwal and Kevin Kellogg and Cole Hill and Hugo Morales and Larry Dunleavy and Gergana Drandova and Anita Pacheco and Jose Jimenez",

year = "2019",

doi = "10.1109/BCICTS45179.2019.8972721",

language = "English",

isbn = "9781728105871",

booktitle = "2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 ; Conference date: 03-11-2019 Through 06-11-2019",

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Khandelwal, S, Kellogg, K, Hill, C, Morales, H, Dunleavy, L, Drandova, G, Pacheco, A & Jimenez, J 2019, Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling. in 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019, Nashville, United States, 3/11/19. https://doi.org/10.1109/BCICTS45179.2019.8972721

Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling. / Khandelwal, Sourabh; Kellogg, Kevin; Hill, Cole et al.
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2019.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs

T2 - 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

AU - Khandelwal, Sourabh

AU - Kellogg, Kevin

AU - Hill, Cole

AU - Morales, Hugo

AU - Dunleavy, Larry

AU - Drandova, Gergana

AU - Pacheco, Anita

AU - Jimenez, Jose

PY - 2019

Y1 - 2019

N2 - This paper presents an analysis on the dependence of the pulsed I-V characteristics of GaN HEMTs under varying quiescent drain voltage (Vdsq) conditions, and a new model is developed for this behavior. It is found that three device parameters change with Vdsq: threshold (or cut-off) voltage, and 2-DEG densities in source and drain side access regions. It is shown that these device parameters have a non-linear dependence on Vdsq. The new model for this non-linear behavior w.r.t Vdsq is validated with measured data for six Vdsq 's for two different GaN technologies. The developed model is also exercised for large signal microwave frequency performance yielding good agreement with measurements and indicating the importance of modeling this trap-related device parameter change with Vdsq. Index Terms - MMIC, power amplifiers, Gallium Nitride, Compact models, GaN trapping effects.

AB - This paper presents an analysis on the dependence of the pulsed I-V characteristics of GaN HEMTs under varying quiescent drain voltage (Vdsq) conditions, and a new model is developed for this behavior. It is found that three device parameters change with Vdsq: threshold (or cut-off) voltage, and 2-DEG densities in source and drain side access regions. It is shown that these device parameters have a non-linear dependence on Vdsq. The new model for this non-linear behavior w.r.t Vdsq is validated with measured data for six Vdsq 's for two different GaN technologies. The developed model is also exercised for large signal microwave frequency performance yielding good agreement with measurements and indicating the importance of modeling this trap-related device parameter change with Vdsq. Index Terms - MMIC, power amplifiers, Gallium Nitride, Compact models, GaN trapping effects.

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DO - 10.1109/BCICTS45179.2019.8972721

M3 - Conference proceeding contribution

AN - SCOPUS:85079213310

SN - 9781728105871

BT - 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

Y2 - 3 November 2019 through 6 November 2019

ER -

Khandelwal S, Kellogg K, Hill C, Morales H, Dunleavy L, Drandova G et al. Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2019 doi: 10.1109/BCICTS45179.2019.8972721

Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling

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