Quiescent drain voltage dependence of pulsed I-V characteristics of GaN HEMTs: analysis and modeling

Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

This paper presents an analysis on the dependence of the pulsed I-V characteristics of GaN HEMTs under varying quiescent drain voltage (Vdsq) conditions, and a new model is developed for this behavior. It is found that three device parameters change with Vdsq: threshold (or cut-off) voltage, and 2-DEG densities in source and drain side access regions. It is shown that these device parameters have a non-linear dependence on Vdsq. The new model for this non-linear behavior w.r.t Vdsq is validated with measured data for six Vdsq 's for two different GaN technologies. The developed model is also exercised for large signal microwave frequency performance yielding good agreement with measurements and indicating the importance of modeling this trap-related device parameter change with Vdsq. Index Terms - MMIC, power amplifiers, Gallium Nitride, Compact models, GaN trapping effects.

Original languageEnglish
Title of host publication2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781728105864
ISBN (Print)9781728105871
DOIs
Publication statusPublished - 2019
Externally publishedYes
Event2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, United States
Duration: 3 Nov 20196 Nov 2019

Conference

Conference2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
CountryUnited States
CityNashville
Period3/11/196/11/19

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