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Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy
A. M. Waite, N. S. Lloyd, K. Osman, W. Zhang, T. Ernst, H. Achard, Y. Wang, S. Deleonibus, P. L. F. Hemment, D. M. Bagnall, A. G. R. Evans, P. Ashburn*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
4
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(Scopus)