Raman studies of GaNP alloy

I. A. Buyanova, W. M. Chen, E. M. Goldys, H. P. Xin, C. W. Tu

Research output: Contribution to journalArticle

Abstract

Raman scattering (RS) spectroscopy is employed to characterize the effect of nitrogen on structural properties of GaNxP1-x alloy with nitrogen composition up to 3%. Two-mode behavior of the alloy is clearly shown. The frequency of the GaP-like LO phonons is found to decrease with N composition as -1.13 cm-1 x. This dependence is proposed to be largely due to the biaxial strain in the GaNP epilayers, as a result of lattice mismatch to the GaP substrate. The frequency of the GaN-like phonons is found to be more sensitive to nitrogen content, increasing with the rate of +2.6 cm-1 x. The addition of nitrogen is also found to cause a dramatic quenching of the two-phonon Raman scattering and an appearance of the zone edge GaP-like vibrations. These effects are suggested to reflect local distortion in the GaNP lattice induced by nitrogen, as well as possible clustering of N atoms.

Original languageEnglish
Pages (from-to)303-308
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume693
Publication statusPublished - 2002
Externally publishedYes

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