Raman study of stress effect in silicon rich carbide (SiCX) film by furnace and rapid thermal annealing for photovoltaic application

Zhenyu Wan*, Shujuan Huang, Martin A. Green, Gavin Conibeer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

Si nanocrystals in SiC X films by both furnace and rapid thermal annealing (RTA) techniques have been studied by Raman characterization. Silicon rich carbide films with different stoichiometric composition were prepared by co-sputtering of Si and SiC targets. Two different annealing processes have been applied on all SiC X amorphous samples: furnace annealing at 1100°C/1hr and RTA at 1100°C/30 sec. Peak position of Raman pattern is strongly shifted from Si reference wafer position in RTA samples (Δ =5.4cm -1 ) compare with furnace samples (Δ=2cm -1 ), indicating great tensile stress on Si nanocrystals. This is because of different thermal expansion coefficient of Si and SiC crystals and fast temperature ramping rate in high temperature annealing in RTA process. From further Raman analysis, we found after applying an additional furnace annealing, all samples with different Si concentration could well release residual stress. But additional RTA could only release residual stress in highest Si concentration samples due to insufficient time duration.

Original languageEnglish
Title of host publication35th IEEEPhotovoltaic Specialists Conference
Subtitle of host publicationconference proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages3752-3754
Number of pages3
ISBN (Electronic)9781424458929, 9781424458912
ISBN (Print)9781424458905
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Publication series

Name
ISSN (Print)0160-8371

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

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