Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping

Jordi Gomis-Bresco*, Guillermo Muñoz-Matutano, Juan Martínez-Pastor, Benito Alén, Luca Seravalli, Paola Frigeri, Giovanna Trevisi, Secondo Franchi

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We model the time-resolved and time-integrated photoluminescence of a single InAs/GaAs quantum dot (QD) using a random population description. We reproduce the joint power dependence of the single QD exciton complexes (neutral exciton, neutral biexciton and charged trions). We use the model to investigate the selective optical pumping phenomenon, a predominance of the negative trion observed when the optical excitation is resonant to a nonintentional impurity level. Our experiments and simulations determine that the negative charge confined in the QD after exciting resonance to the impurity level escapes in 10 ns.

Original languageEnglish
Article number023022
Pages (from-to)1-17
Number of pages17
JournalNew Journal of Physics
Volume13
DOIs
Publication statusPublished - Feb 2011
Externally publishedYes

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    Gomis-Bresco, J., Muñoz-Matutano, G., Martínez-Pastor, J., Alén, B., Seravalli, L., Frigeri, P., ... Franchi, S. (2011). Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping. New Journal of Physics, 13, 1-17. [023022]. https://doi.org/10.1088/1367-2630/13/2/023022