Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Zhenyu Wan; Shujuan Huang; Martin A. Green; Gavin Conibeer

doi:10.1186/1556-276X-6-129

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Zhenyu Wan^*, Shujuan Huang, Martin A. Green, Gavin Conibeer

^*Corresponding author for this work

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Abstract

In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

Original language	English
Article number	129
Number of pages	7
Journal	Nanoscale Research Letters
Volume	6
DOIs	https://doi.org/10.1186/1556-276X-6-129
Publication status	Published - 2011
Externally published	Yes

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Copyright the Author(s) 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

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title = "Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix",

abstract = "In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better {"}degree of crystallization{"} of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.",

author = "Zhenyu Wan and Shujuan Huang and Green, {Martin A.} and Gavin Conibeer",

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doi = "10.1186/1556-276X-6-129",

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journal = "Nanoscale Research Letters",

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T1 - Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

AU - Wan, Zhenyu

AU - Huang, Shujuan

AU - Green, Martin A.

AU - Conibeer, Gavin

N1 - Copyright the Author(s) 2011. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2011

Y1 - 2011

N2 - In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

AB - In this paper, a positive effect of rapid thermal annealing (RTA) technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC) matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%). Si nanocrystals (Si-NC) containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

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VL - 6

JO - Nanoscale Research Letters

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ER -

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

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