Rapid thermal annealing of NTD Si

Li Mo, T. Kannar, D. Alyxiev, K. S A Butcher

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard Broekman, Brian Usher, John Riley
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages411-414
Number of pages4
Volume2000-January
ISBN (Print)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 6 Dec 20008 Dec 2000

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period6/12/008/12/00

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