Rapid thermal annealing of NTD Si

Li Mo; T. Kannar; D. Alyxiev; K. S A Butcher

doi:10.1109/COMMAD.2000.1022977

Rapid thermal annealing of NTD Si

Li Mo, T. Kannar, D. Alyxiev, K. S A Butcher

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard Broekman, Brian Usher, John Riley
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	411-414
Number of pages	4
Volume	2000-January
ISBN (Print)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022977
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

Access to Document

10.1109/COMMAD.2000.1022977

Cite this

Mo, L., Kannar, T., Alyxiev, D., & Butcher, K. S. A. (2000). Rapid thermal annealing of NTD Si. In L. Broekman, B. Usher, & J. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 411-414). Article 1022977 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1022977

@inproceedings{88f5eb4860634187b9b550353ef18862,

title = "Rapid thermal annealing of NTD Si",

abstract = "Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.",

author = "Li Mo and T. Kannar and D. Alyxiev and Butcher, {K. S A}",

year = "2000",

doi = "10.1109/COMMAD.2000.1022977",

language = "English",

isbn = "0780366980",

volume = "2000-January",

pages = "411--414",

editor = "Leonard Broekman and Brian Usher and John Riley",

booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

}

Mo, L, Kannar, T, Alyxiev, D & Butcher, KSA 2000, Rapid thermal annealing of NTD Si. in L Broekman, B Usher & J Riley (eds), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1022977, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 411-414, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1022977

Rapid thermal annealing of NTD Si. / Mo, Li; Kannar, T.; Alyxiev, D. et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard Broekman; Brian Usher; John Riley. Vol. 2000-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 411-414 1022977.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Rapid thermal annealing of NTD Si

AU - Mo, Li

AU - Kannar, T.

AU - Alyxiev, D.

AU - Butcher, K. S A

PY - 2000

Y1 - 2000

N2 - Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.

AB - Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods had identical final resistivities.

UR - http://www.scopus.com/inward/record.url?scp=84949775019&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2000.1022977

DO - 10.1109/COMMAD.2000.1022977

M3 - Conference proceeding contribution

AN - SCOPUS:84949775019

SN - 0780366980

VL - 2000-January

SP - 411

EP - 414

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Broekman, Leonard

A2 - Usher, Brian

A2 - Riley, John

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

ER -

Rapid thermal annealing of NTD Si

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this